MCIMX253CJM4A Freescale Semiconductor, MCIMX253CJM4A Datasheet - Page 22
MCIMX253CJM4A
Manufacturer Part Number
MCIMX253CJM4A
Description
IC MPU IMX25 IND 400MAPBGA
Manufacturer
Freescale Semiconductor
Series
i.MX25r
Datasheet
1.MCIMX257CJM4.pdf
(154 pages)
Specifications of MCIMX253CJM4A
Core Processor
ARM9
Core Size
32-Bit
Speed
400MHz
Connectivity
1-Wire, EBI/EMI, Ethernet, I²C, MMC, SmartCard, SPI, SSI, UART/USART, USB OTG
Peripherals
DMA, I²S, LCD, POR, PWM, WDT
Number Of I /o
128
Program Memory Type
External Program Memory
Ram Size
144K x 8
Voltage - Supply (vcc/vdd)
1.15 V ~ 1.52 V
Data Converters
A/D 3x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
400-MAPBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCIMX253CJM4A
Manufacturer:
JRC
Quantity:
10 000
Company:
Part Number:
MCIMX253CJM4A
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
MCIMX253CJM4A
Manufacturer:
FREESCALE
Quantity:
20 000
3.5.1.2
Table 18
Note:
1. Simulation circuit for parameters Voh and Vol for I/O cells is below
2. Minimum condition: bcs model, OVDD = 3.6 V, and –40 °C. Typical condition: typical model, OVDD = 3.3 V, and 25 °C.
3. Typical condition: typical model, OVDD = 3.3 V, and 25 °C. Maximum condition: bcs model, OVDD = 3.6 V, and 105 °C.
3.5.1.3
Table 19
22
High-level output voltage
Low-level output voltage
Low-level DC input voltage
Input current (no pull-up/down)
High-impedance I/O supply current Icc-ovdd
High-impedance core supply
current
High-level output current
Low-level output current
High-level DC input voltage
High-level output voltage
Low-level output voltage
Output min. source current
Output min. sink current
DC input logic high
DC input logic low
Maximum condition: wcs model, OVDD = 3.0 V, and 105 °C.
DC Electrical Characteristics
DC Electrical Characteristics
shows the DC I/O parameters for SDRAM.
shows the I/O parameters for DDR2 (SSTL_18).
DDR_TYPE = 01 SDRAM I/O DC Parameters
DDR_TYPE = 10 Max Setting DDR I/O DC Parameters
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 8
Table 19. DDR2 (SSTL_18) I/O DC Electrical Characteristics
Table 18. SDRAM DC Electrical Characteristics
Symbol
VIH(dc)
VIL(dc)
Symbol
Icc-vddi
Voh
IIoh
Vol
IIol
Voh
VIH
VIL
Vol
Ioh
IIN
Iol
I
I
Conditions
(Ioh = 4, 8, 12, 16mA)
Ioh = Specified Drive
Ioh = Specified Drive
(Ioh = –4, –8, –12,
Test Conditions
VI = OVDD or 0
Test
Standard Drive
Standard Drive
VI = VDD or 0
—
—
—
—
—
—
VI = OVDD
Max. Drive
Max. Drive
High Drive
High Drive
–16mA)
VI = 0
—
—
OVDD/2 + 0.125
OVDD – 0.28
–0.3 V
–13.4
Min.
13.4
—
–0.3 V
–12.0
Min.
–4.0
–8.0
12.0
2.4
4.0
8.0
2.0
—
—
—
—
Typ.
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
OVDD/2 – 0.125
OVDD + 0.3
Max.
0.28
—
—
—
Max.
1180
1220
Freescale Semiconductor
150
0.4
3.6
0.8
80
—
—
—
Units
Units
mA
mA
mA
mA
V
V
V
V
nA
nA
nA
V
V
V
V
Notes
Notes
—
—
—
2, 3
2, 3
1
2
—
—
—
1
1