AT91SAM7S64C-MU-999 Atmel, AT91SAM7S64C-MU-999 Datasheet - Page 18
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AT91SAM7S64C-MU-999
Manufacturer Part Number
AT91SAM7S64C-MU-999
Description
IC ARM7 MCU FLASH 64K 64QFN
Manufacturer
Atmel
Series
AT91SAMr
Datasheet
1.AT91SAM7S16-MU.pdf
(51 pages)
Specifications of AT91SAM7S64C-MU-999
Core Processor
ARM7
Core Size
16/32-Bit
Speed
55MHz
Connectivity
I²C, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
32
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-QFN
For Use With
AT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9AT91SAM7S-EK - KIT EVAL FOR ARM AT91SAM7S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
AT91SAM7S64B-MU-999
AT91SAM7S64B-MU-999
AT91SAM7S64B-MU-999
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AT91SAM7S64C-MU-999
Manufacturer:
TE
Quantity:
3 000
8. Memories
8.1
8.2
8.3
18
AT91SAM7S512
AT91SAM7S256
AT91SAM7S128
AT91SAM7S Series Summary
• 512 Kbytes of Flash Memory, dual plane
• 64 Kbytes of Fast SRAM
• 256 Kbytes of Flash Memory, single plane
• 64 Kbytes of Fast SRAM
• 128 Kbytes of Flash Memory, single plane
• 32 Kbytes of Fast SRAM
– 2 contiguous banks of 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 32 lock bits, protecting 32 sectors of 64 pages
– Protection Mode to secure contents of the Flash
– Single-cycle access at full speed
– 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 16 lock bits, protecting 16 sectors of 64 pages
– Protection Mode to secure contents of the Flash
– Single-cycle access at full speed
– 512 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 8 lock bits, protecting 8 sectors of 64 pages
– Protection Mode to secure contents of the Flash
– Single-cycle access at full speed
6175IS–ATARM–30-Aug-10