CY8C3246PVA-141 Cypress Semiconductor Corp, CY8C3246PVA-141 Datasheet - Page 94

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CY8C3246PVA-141

Manufacturer Part Number
CY8C3246PVA-141
Description
IC MCU 8BIT 64KB FLASH 48SSOP
Manufacturer
Cypress Semiconductor Corp
Series
PSOC™ 3 CY8C32xxr
Datasheet

Specifications of CY8C3246PVA-141

Core Processor
8051
Core Size
8-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, LIN, SPI, UART/USART
Peripherals
CapSense, DMA, POR, PWM, WDT
Number Of I /o
25
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
1.71 V ~ 5.5 V
Data Converters
A/D 2x12b, D/A 1x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
11.4 Memory
Specifications are valid for –40 °C ≤ T
except where noted.
11.4.1 Flash
Table 11-44. Flash DC Specifications
Table 11-45. Flash AC Specifications
11.4.2 EEPROM
Table 11-46. EEPROM DC Specifications
Document Number: 001-56955 Rev. *J
T
T
T
Parameter
Parameter
Parameter
WRITE
ERASE
BULK
Erase and program voltage
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (16 KB to 64 KB)
Sector erase time (8 KB to 16 KB)
Total device program time, including
JTAG or SWD, and other overhead
Flash data retention time, retention
period measured from last erase cycle
Erase and program voltage
Description
Description
Description
A
≤ 85 °C and T
Figure 11-50. Clock to Output Performance
J
V
Average ambient temp.
T
cycles
Average ambient temp.
T
cycles
A
A
≤ 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
DDD
≤ 55 °C, 100 K erase/program
≤ 85 °C, 10 K erase/program
pin
Conditions
Conditions
Conditions
PSoC
1.71
1.71
Min
Min
Min
20
10
®
3: CY8C32 Family
Typ
Typ
Typ
10
15
5
Data Sheet
Max
Max
Max
5.5
5.5
20
13
35
15
7
5
Page 94 of 119
seconds
Units
Units
years
Units
ms
ms
ms
ms
ms
V
V
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