NCP5351DR2G ON Semiconductor, NCP5351DR2G Datasheet - Page 6

• Manufacturer Part Number: NCP5351DR2G
• Description: IC DRIVER MOSFET DUAL 4A 8SOIC
• Manufacturer: ON Semiconductor
• Type: High Side/Low Sider

Specifications of NCP5351DR2G

• Configuration: High and Low Side, Synchronous
• Input Type: Inverting and Non-Inverting
• Delay Time: 45ns
• Current - Peak: 4A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 25V
• Voltage - Supply: 4.5 V ~ 6.3 V
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Rise Time: 16 ns
• Fall Time: 21 ns
• Supply Voltage (min): - 0.3 V
• Supply Current: 1 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 30 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NCP5351DR2GOS; NCP5351DR2GOS; NCP5351DR2GOSTR

ELECTRICAL CHARACTERISTICS
unless otherwise noted.)
AC OPERATING SPECIFICATIONS
HIGH−SIDE DRIVER
LOW−SIDE DRIVER
UNDERVOLTAGE LOCKOUT
Rise Time
Fall Time
Propagation Delay Time,
TG Going High (Nonoverlap Time)
Propagation Delay Time,
TG Going Low
Rise Time
Fall Time
Propagation Delay Time,
BG Going High (Non−Overlap
Time)
Propagation Delay Time,
BG Going Low
V
V
S
S
Rising
Falling
Parameter
V
V
V
V
T
T
T
T
EN = V
4.5 V, time to BG > 1.0 V, T
EN = V
4.0 V, time to BG < 1.0 V, T
J
J
J
J
BST
BST
BST
BST
= 125°C
= 125°C
= 125°C
= 125°C
(continued) (0°C < T
− V
− V
− V
− V
S
S
, CO = 0 V, dV
, CO = 0 V, dV
DRN
DRN
DRN
DRN
= 5.0 V, T
= 5.0 V, T
= 5.0 V, T
= 5.0 V, T
Test Conditions
http://onsemi.com
S
S
J
J
J
J
/dt > 1.0 V/ms, from 4.0 V to
/dt < −1.0 V/ms, from 4.5 V to
J
= 125°C
= 125°C
= 125°C
= 125°C
< 125°C; V
J
J
= 125°C
= 125°C
6
S
= 5.0 V; 4.0 V < V
BST
< 25 V; V
Min
30
25
−
−
−
−
−
−
−
−
EN
= V
Typ
500
8.0
14
45
18
10
12
55
10
30
S
, C
LOAD
Max
16
21
60
37
15
20
80
18
−
−
= 5.7 nF;
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms