NCP5351DR2G ON Semiconductor, NCP5351DR2G Datasheet - Page 9

• Manufacturer Part Number: NCP5351DR2G
• Description: IC DRIVER MOSFET DUAL 4A 8SOIC
• Manufacturer: ON Semiconductor
• Type: High Side/Low Sider

Specifications of NCP5351DR2G

• Configuration: High and Low Side, Synchronous
• Input Type: Inverting and Non-Inverting
• Delay Time: 45ns
• Current - Peak: 4A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 25V
• Voltage - Supply: 4.5 V ~ 6.3 V
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Rise Time: 16 ns
• Fall Time: 21 ns
• Supply Voltage (min): - 0.3 V
• Supply Current: 1 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 30 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NCP5351DR2GOS; NCP5351DR2GOS; NCP5351DR2GOSTR

DRN
CO
TG
Figure 7. Bottom Gate Sinking Current from 0.108 W
BG
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 5. Top Gate Sinking Current from 0.108 W
−5.0 V
−5.0 V
−3.5 V
−4.5 V
−0.5 V
0 V
0 V
0 V
Figure 8. Bottom Gate Sinking
Figure 6. Top Gate Sinking
Conditions: BST − DRN = 5.0 V;
Room Temperature;
Oscilloscope referenced to V
Conditions: V
Room Temperature;
CO = 0 V.
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9
S
= 5.0 V;
COM
COM
HOT
HOT
−5.0 V
−5.0 V
1.0 mF
R1
1.0 k
S
EN
CO
(5.0 V).
PGND DRN
−5.0 V
C2
−3.5 V
−4.5 V
R3
50
V
S
0 V
Pulse
50 ns
Input
Pulse
50 ns
Input
BST
BG
TG
R1
1.0 k
EN
BST
DRN
PGND CO
V
*Applied after power up and input.
*Applied after power up and input.
S
1.0 mF
C1
TG
BG
R2*
0.108 W
1.0 mF
C2
100 nF
C3
R2*
0.108 W
100 nF
1.0 mF
C4
C1