BGA2717,115 NXP Semiconductors, BGA2717,115 Datasheet - Page 8

• Manufacturer Part Number: BGA2717,115
• Description: MMIC AMPLIFIER SOT-363
• Manufacturer: NXP Semiconductors
• Type: MMIC Wideband Amplifierr

Specifications of BGA2717,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Noise Figure: 2.3dB
• Current - Supply: 8mA
• Frequency: 100MHz ~ 3GHz
• Gain: 24dB
• P1db: -2.6dBm
• Rf Type: ISM
• Test Frequency: 1GHz
• Voltage - Supply: 5V ~ 6V
• Operating Frequency: 1 GHz
• Supply Voltage (max): 6 V
• Supply Voltage (min): 5 V
• Supply Current: 8 mA
• Mounting Style: SMD/SMT
• Power Gain Typ: 24 dB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2072-2; 934058246115; BGA2717 T/R

Philips Semiconductors
9397 750 13293
Product data sheet
Fig 8. Isolation ( s
Fig 10. Load power as a function of drive power at
(dBm)
|s
(dB)
(1) V
(2) V
(3) V
P
12
L
|
20
40
60
10
10
20
30
2
0
0
I
typical values.
f = 1 GHz; Z
1 GHz; typical values.
S
0
50
S
S
S
= 8 mA; V
= 5.5 V.
= 5 V.
= 4.5 V.
1000
S
o
40
= 50 .
= 5 V; P
12
2
) as a function of frequency;
2000
D
30
= 35 dBm; Z
3000
20
o
(1)
(3)
P
f (MHz)
001aab267
001aab269
D
= 50 .
(dBm)
(2)
Rev. 02 — 24 September 2004
4000
10
Fig 9. Insertion gain ( s
Fig 11. Load power as a function of drive power at
(dBm)
|s
(dB)
(1) I
(2) I
(3) I
(1) V
(2) V
(3) V
P
21
L
|
30
20
10
10
10
20
30
2
0
0
P
frequency; typical values.
f = 2.2 GHz; Z
2.2 GHz; typical values.
S
S
S
0
50
D
S
S
S
= 8.9 mA; V
= 8 mA; V
= 7.2 mA; V
= 5.5 V.
= 5 V.
= 4.5 V.
= 35 dBm; Z
1000
S
40
o
S
= 5 V.
S
= 50 .
= 5.5 V.
= 4.5 V.
o
= 50 .
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
21
2000
30
2
MMIC wideband amplifier
) as a function of
3000
BGA2717
20
(3)
P
f (MHz)
001aab268
(2)
001aab270
D
(dBm)
(1)
(3)
(1)
(2)
4000
10
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