MGA-68563-TR1G Avago Technologies US Inc., MGA-68563-TR1G Datasheet - Page 2

• Manufacturer Part Number: MGA-68563-TR1G
• Description: IC AMP LNA MMIC GAAS SMD SOT-363
• Manufacturer: Avago Technologies US Inc.
• Type: General Purpose Amplifierr

Specifications of MGA-68563-TR1G

• Noise Figure: 1dB
• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Supply: 16mA
• Frequency: 100MHz ~ 1.5GHz
• Gain: 19.7dB
• P1db: 17.5dBm
• Test Frequency: 500MHz
• Voltage - Supply: 3V
• Mounting Style: SMD/SMT
• Number Of Channels: 1
• Operating Frequency: 1500 MHz
• Operating Supply Voltage: 3 V
• Supply Current: 16 mA @ 3 V
• Maximum Power Dissipation: 600 mW
• Manufacturer's Type: Low Noise Amplifier
• Frequency (max): 1.5GHz
• Operating Supply Voltage (typ): 3V
• Package Type: SOT-363
• Mounting: Surface Mount
• Pin Count: 6
• Noise Figure (typ): 1@500MHzdB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Rf Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 516-2130-2

Pin Connections and Package Marking
MGA-68563 Absolute Maximum Ratings
Figure 1a. Test circuit of the 0.5 GHz production test board used for NF, Gain
and OIP3 measurements. This circuit achieves a trade-off between optimal
NF, Gain, OIP3 and input return loss. Circuit losses have been de-embedded
from actual measurements.
2
INPUT
Symbol
V
I
P
I
P
T
T
θ
GND
GND
d
ref
CH
d
in
diss
STG
ch_b
100 pF
1
2
3
6.8 nH
Parameter
Device Voltage (pin 6)
Device Current (pin 6)
CW RF Input (pin3)
(Vd=3V, Id=10mA)
(Vd=0V, Id=0mA)
Bias Reference Current (pin 4)
Total Power Dissipation
Channel Temperature
Storage Temperature
Thermal Resistance
+
3
4300 Ω
3V
1 2 5
MGA-68563
4
6
5
4 BIAS
[3]
OUTPUT
and V
GND
[5]
[1]
[2]
[2]
6
d
[4]
47 nH
Note:
Package marking
provides orientation
and identification:
“6C” = Device Code
“x” = Date code
indicates the month
of
ture.
10 nF
68 pF
100 pF
Units
V
mA
dBm
dBm
mA
mW
°C
°C
°C/W
manufac-
Absolute
Maximum
6
100
21
21
1
600
150
150
97
Simplified Schematic
RF Output
Figure 1b. A diagram showing the connection to the DUT during an S and
Noise parameter measurement using an automated tuner system.
RFin
Direct to
Ground
match
Vdd supply from
Input
Agilent 4142
Wire Supplying
Vbias from
Agilent 4142
Bias
Bias
R
V
Tee
bias
bias
4
3
Notes:
1. Operation of this device above any one of
2. Bias is assumed at DC quiescent conditions.
3. With the DC (typical bias) and RF applied to
4. Total dissipation power is referred to lead
5. Thermal resistance measured using 150°C
these parameters may cause permanent
damage.
the device at board temperature TB = 25°C.
“5” temperature. Tc=92°C, derate Pdiss at
10.3mW/°C for Tc>92°C.
Liquid Crystal Measurement method.
Bias
Reference
Planes
I
GND
bias
1, 2, 5
Feedback
Blocking
Cap
6
Vd
Id = I
I
ds
Direct to
Ground
ds
Input
RF
+ I
RFout
bias