MGA-83563-BLKG Avago Technologies US Inc., MGA-83563-BLKG Datasheet - Page 17

• Manufacturer Part Number: MGA-83563-BLKG
• Description: IC RF AMP GAAS 3V 22DBM
• Manufacturer: Avago Technologies US Inc.
• Type: Power Amplifierr

Specifications of MGA-83563-BLKG

• P1db: 19.7dBm
• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Supply: 152mA ~ 200mA
• Frequency: 500MHz ~ 6GHz
• Gain: 23dB
• Test Frequency: 2GHz
• Voltage - Supply: 2.7V ~ 3.6V
• Mounting Style: SMD/SMT
• Technology: Power Amplifier
• Number Of Channels: 1
• Operating Frequency: 6000 MHz
• Operating Supply Voltage: 3 V
• Supply Current: 200 mA @ 3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Rf Type: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 516-1956; MGA-83563-BLKG

17
Summary of Example Amplifiers
A schematic diagram for the three example amplifiers
covering 2.5 GHz, 1.9 GHz, and 900 MHz is shown in
Figure 38.
Component values for the three designs are summarized
in Table 5.
Table 5. Component Values for Example Amplifiers.
The completed amplifier with all components and SMA
connectors is shown in Figure 39. The circuit is fabricated
on 0.031-inch FR-4 material.
The additional 1000 pF bypass capacitor, C5, was added
to the bias line near the V
stage feedback. This layout has provision for an inductor
(L4) at the output of the MGA-83563. This inductor is not
used in for these example amplifiers and is replaced by
a short.
Use of the MGA-83563 for Linear Applications
Due to the thermal limitations covered in the “Thermal
Design for Reliability” section, the MGA-83563 is best
suited for use as a saturated mode amplifier. The MGA-
83563 can however be used with reduced output power
performance by lowering the supply voltage.
Some saturated amplifier applications may also benefit
from operation at reduced V
current drain and extending battery life.
Input
Figure 38. Schematic Diagram for the Example Amplifiers.
RF
C1, C3, C4
(nH, pF)
L1
L2
L3
L4
C2
C5
L1
0.17 in
50 Ω
900 MHz
5.6
12
82
3.6
150
4
3
C1
83
d
Not used (short circuit)
1
6
connection to eliminate inter-
L2
L4
d
for the purpose of reducing
Frequency
0.08 in
1.9 GHz
50 Ω
1000
2.2
2.7
1.2
33
82
C4
C2
(RFC)
L3
2.5 GHz
C3
2.7
1.5
0.9
22
62
C5
Output
RF
V
d
P
amples are shown in Figures 40 and 41, respectively. The
methods presented in the “Thermal Design for Reliabil-
ity” section may be used to arrive at a maximum supply
voltage that corresponds to the desired MTTF goal.
Figure 39. Completed MGA-83563 Amplifier Assembly.
The P
the example amplifiers tuned for maximum P
be higher with linear tuning. When designing for linear
applications, the value for the interstage inductor L2 is
taken from Plot A of Figure 47 in the Appendix.
The data in Tables 2– 4 shows that some increase in device
current occurs as the output power approaches P
lowance should be made in the thermal analysis for the
increased P
Operation at Higher Supply Voltages
While the MGA-83563 is designed primarily for use in
+3 volt applications, the output power can be increased
by using a higher supply voltage. Referring to Figure 5,
the P
supply voltage of +3.6 volts.
Note: If bias voltages greater than 3 volts are used, ap-
propriate caution should be given to both the thermal
limits and the Absolute Maximum Ratings.
Figure 40. Output Power vs. Supply Voltage for the 2.5 GHz Amplifier.
1dB
25.00
23.00
21.00
19.00
17.00
15.00
13.00
11.00
9.00
7.00
5.00
and P
1.00
sat
1dB
can be increased by up to 1 dB by using a power
power plotted in Figures 40 and 41 is taken from
1.25
sat
diss
vs. V
1.50
if the circuit is to be used at or near P
MGA-83-A
IN
P
P
+V
d
sat
1dB
for the 2.5 GHz and 900 MHz circuit ex-
d
1.75
SUPPLY VOLTAGE, V
L1
2.00
C5
L4
83
2.25
L3
2.50
C2
L2
C4
d
C3
(V)
OUT
2.70
3.00
sat
. P
3.30
1dB
1dB
1dB
3.50
. Al-
.
will