BGA 771L16 E6327 Infineon Technologies, BGA 771L16 E6327 Datasheet - Page 10

• Manufacturer Part Number: BGA 771L16 E6327
• Description: IC AMP SIL-MMIC TSLP-16-1
• Manufacturer: Infineon Technologies

Specifications of BGA 771L16 E6327

• Current - Supply: 3.4mA
• Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
• Gain: 16.1dB
• Noise Figure: 1.1dB
• P1db: -6dBm
• Package / Case: TSLP-16-1
• Rf Type: UMTS
• Voltage - Supply: 2.7V ~ 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Test Frequency: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BGA771L16E6327INTR; BGA771L16E6327XT; SP000417116

2.9
2.9.1
Table 8
Parameter
Pass band range band V
Pass band range band VI
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Stability factor
Input compression point
Inband IIP3
P
1) Verified by random sampling; not 100% RF tested
2) Not tested in production; guaranteed by device design
Data Sheet
f
1
f1
- f
= P
2
= 1 MHz
f2
= -37 dBm
1)
Measured RF Characteristics Low Band
Measured RF Characteristics UMTS Bands V / VI
Typical Characteristics 800 MHz Band,
2)
1)
1)
1)
1)
Symbol
I
I
S
S
S
S
NF
NF
S
S
S
S
k
IP
IP
IIP3
IIP3
CCHG
CCLG
21HG
21LG
12HG
12LG
11HG
11LG
22HG
22LG
1dBHG
1dBLG
HG
LG
HG
LG
Min.
869
875
BGA771L16 - Low Power Dual-Band UMTS LNA
T
10
Typ.
3.4
0.65
16.1
-7.5
-36
-8
1.1
7.5
-17
-17
-17
-13
>2.3
-6
-8
-7
2
A
Values
= 25 °C,
Max.
894
885
V
CC
Measured RF Characteristics Low Band
= 2.8 V
Unit
MHz
MHz
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
Electrical Characteristics
Note / Test Condition
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
50
50
50 , high gain mode
50 , low gain mode
DC to 10 GHz; all gain
modes
High gain mode
Low gain mode
High gain mode
Low gain mode
high gain mode
low gain mode
V3.0, 2008-08-26