RF3806TR7 RFMD, RF3806TR7 Datasheet - Page 9

• Manufacturer Part Number: RF3806TR7
• Description: IC AMP HBT GAAS PRE-DVR 4W AIN
• Manufacturer: RFMD

Specifications of RF3806TR7

• Current - Supply: 660mA ~ 800mA
• Frequency: 1.5GHz ~ 2.2GHz
• Gain: 17dB ~ 19dB
• P1db: 35dBm ~ 37dBm
• Package / Case: 8-LCC
• Rf Type: W-CDMA, SATCOM, DCS, PCS, UMTS
• Test Frequency: 2.11GHz ~ 2.17GHz
• Voltage - Supply: 5V ~ 8V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: 689-1026-2

At P
slug) is calculated:
T
set at 85°C. Thus, thermal resistance results can be subject to where one defines "ambient".
Using MTTF curve, it is seen that MTTF=80 years for 160°C junction temperature. In a design where higher MTTF is desired,
one option would be to run RF3806 at reduced V
shows equivalent linearity to V
ing at V
as with V
be 4.385W. From data sheet graph, R
Tj=100.2+4.385*9.95=144°C
MTTF curve shows >450 years for this Tj. As mentioned, the above analysis is not exact, but does give us a practical way to get
an idea of where a condition will fall in terms of Tj and MTTF. Required data to do the calculation: data sheet curves and evalu-
ation board test in temperature chamber (to determine dissipated power).
Note that projected Tj vs Pout curves are included with DCS/PCS data (1800MHz-1990MHz high power application sche-
matic), to illustrate the same type of trade offs between operating at 6V and 8V. These curves are approximate, obtained with
the following method (called out in above paragraph):
1. UMTS evaluation board was converted to matching seen on DCS/PCS application schematic (changes @ input/out-
2. Evaluation board was run in oven at 85°C ambient.
3. Dissipated power was calculated at each data point. Using R
Finally, a description is included here for running two RF3806 in parallel with hybrid combiners. This approach enables design
to achieve substantial linearity enhancement for a given P
couplers (combiners) from Anaren (part number XC2100E-03) are used with 2 RF3806 UMTS evaluation boards. The bias con-
dition is V
single PA.
RFMD can be contacted to obtain RF3806 qualification report, which adheres to demanding infrastructure standards.
Rev A4 DS071029
CASE
put/interstage/bias resistors at V
junction (Tj) can be obtained. Tj was then plotted, and can be applied to MTTF vs Tj curve.
OUT
=T
=26dBm, see that Tj=160°C for ambient (stage) temperature=85°C. At this condition, temperature of case (GND
CC
REF
CC
CC
=6V. A practical approximation to Tj at adjusted operating condition can be made. Assume T
=8V and 26dBm out (conservative estimate). Dissipated power for 6V/25dBm/85°C is known from test data to
+P
=6V, I
DISS
REF
*(R
=60mA. ACP performance vs temperature is shown in graph section, which can be compared to that for
TH_BOARD
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
CC
)=94°C+(6.191W)*1°C/W=100.2°C. Note that T
=8V/26dBm. Reducing P
REF
TH_JC
).
=9.95°C/W. Tj is approximated to be:
CC
. Viewing UMTS ACP curves in graph section of data sheet, V
OUT
OUT
, while maintaining low die temperature. In this example, hybrid
specification to 25dBm will allow for higher MTTF while operat-
TH_JREF
from data sheet curve, temperature delta to RF3806
REF
was elevated to 94°C when stage was
CASE
RF3806
equal to 100.2°C,
CC
=6V/25dBm
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