BGA 427 E6327 Infineon Technologies, BGA 427 E6327 Datasheet - Page 3

IC RF CASCADE AMP SOT-343

BGA 427 E6327

Manufacturer Part Number
BGA 427 E6327
Description
IC RF CASCADE AMP SOT-343
Manufacturer
Infineon Technologies
Type
General Purpose Amplifierr
Datasheet

Specifications of BGA 427 E6327

Noise Figure
2.2dB
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Current - Supply
25mA
Frequency
100MHz ~ 3GHz
Gain
18.5dB
Rf Type
Bluetooth
Test Frequency
1.8GHz
Voltage - Supply
3V ~ 6V
Mounting Style
SMD/SMT
Number Of Channels
1
Operating Frequency
3000 MHz
Operating Supply Voltage
3 V
Supply Current
25 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
P1db
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BGA427E6327
BGA427E6327
BGA427E6327INTR
BGA427E6327XT
SP000011091
S-Parameters at T
f
GHz
V
0.1
0.2
0.5
0.8
0.9
1
1.5
1.8
1.9
2
2.5
3
IN
Spice-model BGA 427
D
= 3V, Z
BGA 427-chip
including parasitics
11
S
MAG
0.1382
0.1179
0.1697
0.1824
0.1782
0.1827
0.1969
0.2021
0.2116
0.2437
0.176
0.258
R
11
C
1
o
P1
= 50
C
C
1
P2
ANG
-133.5
-156.1
-162.8
-167.7
172.8
153.3
R
A
-38.3
-20.8
-56.9
-69.1
-80.6
3
-16
= 25 °C, (Testfixture, Appl.1)
+V
T1
13
12
R
C’-E’-
Diode
GND
2
MAG
24.821
24.606
22.236
18.258
17.152
15.786
10.923
9.029
8.486
8.015
6.259
5.103
C
P3
C
S
P4
21
ANG
164.9
158.9
135.2
115.4
109.4
84.9
74.7
72.3
104
77
63
55
C
P5
EHA07381
3
T2
R
14
4
MAG
0.0022
0.0046
0.0104
0.0169
0.0194
0.0225
0.0385
0.0479
0.0517
0.0549
0.0709
0.0892
OUT
S
T1
T2
R
R
R
R
C
C
C
C
C
C
C'-E'-diode T1
12
1
2
3
4
1
P1
P2
P3
P4
P5
ANG
50.7
71.8
83.8
94.8
97.3
98.3
99.7
99.3
98.9
98.8
97.1
96.9
MAG
0.6435
0.6278
0.4453
0.4326
0.4129
0.3852
0.3917
0.3946
0.3991
0.4202
0.4477
T501
T501
14.5k
280
2.4k
170
2.3pF
0.2pF
0.2pF
0.6pF
0.1pF
0.1pF
0.54
2007-07-12
S
22
BGA427
ANG
174.8
166.9
147.3
140.2
139.4
138.1
139.6
139.3
138.8
138.3
134.6
131

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