BGA 427 H6327 Infineon Technologies, BGA 427 H6327 Datasheet

RF Amplifier RF SILICON MMIC

BGA 427 H6327

Manufacturer Part Number
BGA 427 H6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Silicon MMIC Amplifierr
Datasheet

Specifications of BGA 427 H6327

Operating Frequency
1.8 GHz
P1db
7 dBm
Noise Figure
2.2 dB
Operating Supply Voltage
6 V
Supply Current
25 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-343
Minimum Operating Temperature
- 65 C
Other names
BGA427H6327XT
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BGA427
Maximum Ratings
Parameter
Device current
Device voltage
RF input power
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - soldering point
1
2
Si-MMIC-Amplifier
Total power dissipation
T
Pb-containing package may be available upon special request
For calculation of R
Cascadable 50
Unconditionally stable
Gain |S
Noise figure NF = 2.2 dB at 1.8 GHz
Typical device voltage V
Reverse isolation
Pb-free (RoHS compliant) package
S
gain |S
IP
= 120 °C
3out
= +7 dBm at 1.8 GHz (V
21
21
|
|
2
2
= 22 dB at 1.8 GHz (Appl.2)
= 18.5 dB at 1.8 GHz (Appl.1)
thJA
-gain block
please refer to Application Note Thermal Resistance
in SIEGET
35 dB (Appl.2)
Marking
BMs
2)
D
= 2 V to 5 V
D
25-Technologie
=3V, I
1, IN
1)
D
=9.4mA)
Circuit Diagram
Pin Configuration
2, GND 3, +V
1
Symbol
I
V
P
P
T
T
T
R
D
j
A
stg
D
tot
RFin
thJS
,+V
IN
1
4, Out
4
-65 ... 150
-65 ... 150
3
Value
150
150
-10
25
295
6
Package
SOT343
2
GND
2007-07-12
BGA427
1
2
Unit
V
K/W
mA
mW
dBm
°C
3
4
EHA07378
+
OUT
V

Related parts for BGA 427 H6327

BGA 427 H6327 Summary of contents

Page 1

Si-MMIC-Amplifier in SIEGET Cascadable 50 -gain block Unconditionally stable 2 Gain | 18 1.8 GHz (Appl. gain | 1.8 GHz (Appl. dBm at 1.8 GHz ...

Page 2

Electrical Characteristics at T Parameter AC characteristics Insertion power gain f = 0.1 GHz GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz ...

Page 3

S-Parameters °C, (Testfixture, Appl. GHz MAG ANG 0.1 0.1382 -38.3 0.2 0.1179 -16 0.5 0.1697 -20.8 0.8 0.1824 -56.9 0.9 0.1782 -69.1 1 0.176 ...

Page 4

... Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes BF = 83.23 IKF = 0.16493 BR = 10.526 IKR = 0.25052 1.9289 VJE = ...

Page 5

Insertion power gain | parameter Intercept point at the output (f) 3out parameter D D ...

Page 6

Package Outline +0.1 0.3 -0.05 4x 0.1 Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 2 ±0.2 0.1 MAX. 1.3 0 0.15 1 ...

Page 7

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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