BGA2714,115 NXP Semiconductors, BGA2714,115 Datasheet

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BGA2714,115

Manufacturer Part Number
BGA2714,115
Description
IC MMIC WIDEBAND AMPLIFER UMT6
Manufacturer
NXP Semiconductors
Type
General Purpose Amplifierr
Datasheet

Specifications of BGA2714,115

Noise Figure
2.2dB
Package / Case
SC-70-6, SC-88, SOT-363
Current - Supply
10mA
Frequency
2.7GHz
Gain
22dB
P1db
-7.9dBm
Test Frequency
950MHz
Voltage - Supply
4V
Bandwidth
2700 MHz
Mounting Style
SMD/SMT
Number Of Channels
1
Supply Current
5.7 mA @ 3 V
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rf Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934061115115
BGA2714 T/R
BGA2714 T/R
1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
Table 1.
T
I
I
I
I
I
I
I
I
I
I
f
(MHz)
250
950
2150
amb
BGA2714
MMIC wideband amplifier
Rev. 01 — 24 May 2007
Internally matched to 50
Wide frequency range (2.7 GHz at 3 dB gain bandwidth)
Flat 21 dB gain ( 1 dB from DC up to 2500 MHz)
Very low current (4.6 mA) at low supply voltage of 3 V
Very good reverse isolation (> 50 dB up to 2 GHz)
Good linearity with low second order and third order products
Low noise (NF = 2.2 dB at 1 GHz)
Unconditionally stable (K > 5)
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.7 GHz
= 25 C; measured on demo board; typical values.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Typical performance
V
(V)
3.0
3.0
3.0
SUP
I
(mA)
4.58
4.58
4.58
SUP
G
(dB)
20.7
20.4
20.8
p
NF
(dB)
2.4
2.2
3.0
P
(dBm)
7.8
7.9
9.0
L(1dB)
P
(dBm)
Product data sheet
2.4
3.4
4.7
L(sat)
IP3
(dBm)
4.3
2.1
0.0
O

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BGA2714,115 Summary of contents

Page 1

BGA2714 MMIC wideband amplifier Rev. 01 — 24 May 2007 1. Product profile 1.1 General description Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. Table ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number BGA2714 4. Marking Table 4. Type number BGA2714 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V SUP I SUP P tot T stg drive BGA2714_1 Product data sheet Pinning ...

Page 3

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-sp) 7. Characteristics Table SUP Symbol Parameter I SUP out ISL NF B 3dB K P L(sat) P L(1dB) BGA2714_1 Product data sheet Thermal characteristics Parameter thermal resistance from junction to solder point Characteristics = 4.58 mA measured on demo board; unless otherwise specified. ...

Page 4

... NXP Semiconductors Table SUP Symbol Parameter IP3 I IP3 O P L(2H) IM2 8. Application information Figure 1 internally matched and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased ...

Page 5

... NXP Semiconductors 8.1 Application examples wideband amplifier mixer from RF circuit oscillator The MMIC is very suitable as IF amplifier in e.g. LNB’s. The excellent wideband characteristics make it an easy building block. Fig 2. Application as IF amplifier 8.2 Graphs Fig 4. Input reflection coefficient (S ...

Page 6

... NXP Semiconductors Fig 5. Output reflection coefficient ( (dB 1000 dBm; Z amb drive ( 3 4.96 mA. SUP SUP ( 3 4.58 mA. SUP SUP ( 2 4.16 mA. SUP SUP Fig 6. Insertion power gain as function of frequency; typical values BGA2714_1 Product data sheet 135 +0.5 +0.2 0 0.2 0.5 180 0.2 0.5 135 ...

Page 7

... NXP Semiconductors 0 ISL (dB 1000 4.58 mA; V amb SUP dBm drive 0 Fig 8. Isolation as function of frequency; typical values 5 NF (dB (1) (2) ( 1000 amb 4.96 mA. SUP SUP ( 3 4.58 mA. SUP SUP ( 2 4.16 mA. SUP SUP Fig 10. Noise figure as function of frequency BGA2714_1 Product data sheet 001aaf768 2000 ...

Page 8

... NXP Semiconductors (dBm) (1) (2) ( 250 MHz; Z amb ( 3.3 V. SUP ( 3.0 V. SUP ( 2.7 V. SUP Fig 12. Output power as function of input power at 250 MHz; typical values (dBm) (1) (2) ( 2150 MHz; Z amb ( 3.3 V. SUP ( 3.0 V. SUP ( 2.7 V. SUP Fig 14. Output power as function of input power at 2150 MHz; typical values ...

Page 9

... NXP Semiconductors 0 ( (2) IMD3 (3) (dBm (1) (2) (3) 60 IMD3 950 MHz; f amb ( 3.3 V. SUP ( 3.0 V. SUP ( 2.7 V. SUP Fig 16. Output power and third order intermodulation as functions of input power around 950 MHz; typical values (1) f (2) f Fig 18. Second-order intermodulation distance as function of input power; typical values ...

Page 10

... NXP Semiconductors 8.3 Scattering parameters Table 8. Scattering parameters I = 4.58 mA SUP SUP drive f (MHz Magnitude Angle (ratio) (deg) 100 0.155 33.5 200 0.170 26.5 400 0.280 2.2 600 0.346 30.4 800 0.365 62.7 1000 0.360 91.4 1200 0.335 124.9 1400 0.305 156.3 1600 0 ...

Page 11

... NXP Semiconductors 9. Test information True size = mm. Fig 19. PCB layout and demo board with components Table 9. Component C1 IC1 L1 BGA2714_1 Product data sheet 30 mm OUT List of components used for the typical application Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor BGA2714 MMIC not used Rev. 01 — ...

Page 12

... NXP Semiconductors 10. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 Fig 20. Package outline SOT363 BGA2714_1 Product data sheet scale 2.2 1.35 2.2 1 ...

Page 13

... NXP Semiconductors 11. Abbreviations Table 10. Acronym DC IF LNA LNB PCB RF 12. Revision history Table 11. Revision history Document ID Release date BGA2714_1 20070524 BGA2714_1 Product data sheet Abbreviations Description Direct Current Intermediate Frequency Low-Noise Amplifier Low-Noise Block converter Printed-Circuit Board Radio Frequency Data sheet status Product data sheet Rev. 01 — ...

Page 14

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 15

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 Application information 8.1 Application examples . . . . . . . . . . . . . . . . . . . . 5 8.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8.3 Scattering parameters . . . . . . . . . . . . . . . . . . 10 9 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Package outline ...

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