MGA-412P8-TR2G Avago Technologies US Inc., MGA-412P8-TR2G Datasheet - Page 2

IC PWR AMP PHEMT GAAS ENH 8-PLCC

MGA-412P8-TR2G

Manufacturer Part Number
MGA-412P8-TR2G
Description
IC PWR AMP PHEMT GAAS ENH 8-PLCC
Manufacturer
Avago Technologies US Inc.
Type
Power Amplifierr
Datasheet

Specifications of MGA-412P8-TR2G

P1db
24dBm ~ 25.3dBm
Package / Case
8-LPCC
Current - Supply
40mA ~ 55mA
Frequency
1.7GHz ~ 3GHz
Gain
23dB ~ 25.5dB
Rf Type
802.15/BLUETOOTH, ISM 802.11b/G/Wi-Fi, Wireless LAN
Test Frequency
2.452GHz
Voltage - Supply
3.3V
Operating Frequency
1.7 GHz to 3 GHz
Operating Supply Voltage
5 V
Maximum Power Dissipation
800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number Of Channels
1 Channel
Manufacturer's Type
Power Amplifier
Frequency (max)
3GHz
Operating Supply Voltage (typ)
3.3V
Package Type
LPCC
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MGA-412P8-TR2G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Figure 1. Id@ 2.452GHz; Nominal = 40mA, USL: 55mA
Figure 3. Gain@ 2.452GHz; Nominal = 25.5dB, LSL: 23 dB
2
Absolute Maximum Rating
Product Consistency Distribution Charts
Symbol
V
P
P
T
T
30
23
dd
in
diss
j
STG
LSL
35
24
Parameter
Device Voltage, RF output to ground
CW RF Input Power (Vdd = 3.3V)
Total Power Dissipation
Junction Temperature
Storage Temperature
25
40
[1]
26
45
Tc=25°C
[2]
27
50
[4,5]
USL
55
28
Units
V
dBm
W
o
o
C
C
Figure 2. P1dB @ 2.452GHz; Nominal = 25.3dBm, LSL: 24dBm
Notes:
4. Distribution data sample size is 500 samples taken from 3 different
5. Measurements are made on production test board, which represents
Absolute Max.
5
10
0.8
150
-65 to 150
24 24.2
LSL
wafers and 3 different lots. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
a trade-off between optimal Gain and P1dB. Circuit losses have been
de-embedded from actual measurements.
24.6
Thermal Resistance
(Vdd = 3.3V), θjc = 33.3 °C/W
Notes:
1. Operation of this device in excess of any of
2. Board (package belly) temperature, Tb is 25 °C.
3. Thermal resistance measured using 150 °C
these limits may cause permanent damage.
Derate 30mW/ °C for Tb>123.36 °C.
Liquid Crystal Measurement Technique.
25 25.2
[3]
25.6
26

Related parts for MGA-412P8-TR2G