MGA-645T6-TR1G Avago Technologies US Inc., MGA-645T6-TR1G Datasheet - Page 2

• Manufacturer Part Number: MGA-645T6-TR1G
• Description: IC RF AMP LNA GAAS MMIC 6-UTP
• Manufacturer: Avago Technologies US Inc.
• Type: General Purpose Amplifierr
• Series: -r

Specifications of MGA-645T6-TR1G

• Noise Figure: 1.1dB
• Package / Case: 6-XFDFN Exposed Pad
• Current - Supply: 13mA
• Frequency: 1.5GHz ~ 3GHz
• Gain: 15dB
• P1db: -5dBm
• Rf Type: WiMAX / WiBro
• Test Frequency: 2.4GHz
• Voltage - Supply: 4V
• Mounting Style: SMD/SMT
• Number Of Channels: 1
• Operating Frequency: 3000 MHz
• Operating Supply Voltage: 4 V
• Maximum Power Dissipation: 80 mW
• Maximum Operating Temperature: + 150 C
• Manufacturer's Type: Low Noise Amplifier
• Frequency (max): 3GHz
• Operating Supply Voltage (max): 4V
• Package Type: UTSLP
• Mounting: Surface Mount
• Pin Count: 6
• Noise Figure (typ): 1.1@2400MHzdB
• Frequency Rf: 3GHz
• Noise Figure Typ: 1.1dB
• Supply Current: 7mA
• Power Dissipation Pd: 80mW
• Frequency Max: 3GHz
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Frequency Min: 1.5GHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

MGA-645T6
Low Noise Amplifier with Bypass/Shutdown Mode
in Low Profile Package
Data Sheet
Description
Avago Technologies’ MGA-645T6 is an economical,
easy-to-use GaAs MMIC Low Noise Amplifier (LNA) with
Bypass/ Shutdown mode. The LNA has low noise and
high linearity achieved through the use of Avago Tech-
nologies’ proprietary 0.5um GaAs Enhancement-mode
pHEMT process. The Bypass/Shutdown mode enables
the LNA to be bypassed during high input signal power
and reduce current consumption. It is housed in a low
profile 2 x 1.3 x 0.4mm 6-pin Ultra Thin Package. The
compact footprint and low profile coupled with low
noise, high linearity make the MGA-645T6 an ideal choice
as a low noise amplifier for mobile receiver in the WiMax,
WLAN(802.11b/g), WiBro and DMB applications.
Component Image
Pin Configuration
(Vbypass)
Simplified Schematic

RFin
Vbypass
(RF_IN)
(GND)
Pin 1
Pin 2
Pin 3
L1
.
4FYM
2
1
3
Top View
GND
MGA-645T6
bias/control
Note:
Package marking provides
orientation and identification
“4F” = Product Code
“Y” = Year of manufacture
“M” = Month of manufacture
Pin 6
(Not Used)
Pin 5
(RF_OUT)
Pin 4
(VDD)
6
5
4
L3
L2
C1
C2
RFout
Vdd
Features
• 2.0 x 1.3 x 0.4 mm
• Low bias current
• Simple matching network
• 1.5 GHz – 3 GHz operating range
• Adjustable bias current
• Low Noise Figure
• Bypass/Shutdown Mode using a single pin
• Low current consumption in Bypass Mode, <100uA
• Fully matched to 50 ohm in Bypass Mode
• High Linearity (LNA and Bypass Mode)
• Low profile package
Typical Performance
2.4 GHz; 3V, 7mA (typ):
• 15 dB Gain
• 1.1 dB Noise Figure with 9dB Input Return Loss
• +7 dBm Input IP3
• -5 dBm Input Power at 1dB gain compression
• 4.5 dB Insertion Loss in Bypass Mode
• 16dBm IIP3 in Bypass Mode (Pin = -20dBm)
• <100uA current consumption in Bypass & Shutdown
Applications
• Low noise amplifier for GPS, WiMax, WLAN, WiBro and
• Other ultra low noise applications in the 1.5 – 3 GHz
Mode
DMB applications.
band
Attention: Observe precautions for handling
electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
3
6-lead Ultra Thin Package