MGA-82563-TR2G Avago Technologies US Inc., MGA-82563-TR2G Datasheet - Page 2

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MGA-82563-TR2G

Manufacturer Part Number
MGA-82563-TR2G
Description
IC AMP MMIC GAAS 3V SOT-363
Manufacturer
Avago Technologies US Inc.
Type
General Purpose Amplifierr
Datasheet

Specifications of MGA-82563-TR2G

P1db
17.3dBm
Noise Figure
2.2dB
Package / Case
SC-70-6, SC-88, SOT-363
Current - Supply
63mA ~ 101mA
Frequency
100MHz ~ 6GHz
Gain
13.5dB
Rf Type
Cellular, ISM, PHS, PCS, WLL, SATCOM
Test Frequency
2GHz
Voltage - Supply
2.7V ~ 3.3V
Operating Frequency
100 MHZ to 6 GHz
Operating Supply Voltage
5 V
Supply Current
105 mA
Mounting Style
SMD/SMT
Number Of Channels
1 Channel
Manufacturer's Type
MMIC Amplifier
Frequency (max)
6GHz
Operating Supply Voltage (typ)
3V
Package Type
SOT-363
Mounting
Surface Mount
Pin Count
6
Noise Figure (typ)
2.7@6000MHzdB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MGA-82563-TR2G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
MGA-82563 Absolute Maximum Ratings
MGA-82563 Electrical Specifications,
Notes:
1. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section.
2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial character-
2
Symbol
VSWR
VSWR
ization of this product, and is intended to be used as an estimate for distribution of the typical specification.
NF
|S
NF
G
P
Symbol
IP
1 dB
I
21
test
T
d
V
T
P
test
V
3
V
50
STG
|
gd
in
ch
2
d
in
out
in
Parameters and Test Conditions
Gain in test circuit
Noise Figure in test circuit
Noise Figure in 50 Ω system
Gain in 50 Ω system
Output Power at 1 dB Gain Compression
Output Third Order Intercept Point
Input VSWR
Output VSWR
Device Current
Device Voltage, RF Output
to Ground
Device Voltage, Gate
to Drain
Range of RF Input Voltage
to Ground
CW RF Input Power
Channel Temperature
Storage Temperature
Parameter
[1]
[1]
T
C
= 25°C, Z
O
= 50 Ω, V
Units
dBm
°C
°C
V
V
V
f = 0.2–5.0 GHz
f = 0.2–5.0 GHz
d
= 3 V
f = 2.0 GHz
f = 2.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
+0.5 to -1.0
Maximum
-65 to 150
Absolute
-6.0
+13
165
5.0
[1]
Units
dBm
dBm
mA
dB
dB
Notes:
1. Permanent damage may occur if any
2. T
of these limits are exceeded.
perature at the top of the package.)
12.0
Min.
C
63
= 25°C (T
Thermal Resistance
1.8:1
1.2:1
T
13.2
14.7
14.5
13.5
12.1
10.7
17.4
17.5
17.3
17.1
17.0
16.8
+31
Typ.
2.2
2.3
2.2
2.2
2.2
2.4
2.7
8.8
84
ch-c
C
is defined to be the tem-
= 180°C/W
Max.
101
2.9
15
[2]
Std Dev
:
0.35
0.20
0.20
0.35
0.54
1.0
[2]

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