MHV5IC2215NR2 Freescale Semiconductor, MHV5IC2215NR2 Datasheet - Page 2

• Manufacturer Part Number: MHV5IC2215NR2
• Description: IC RF POWER AMP 2170MHZ 16-PFP
• Manufacturer: Freescale Semiconductor

Specifications of MHV5IC2215NR2

• Current - Supply: 115mA
• Frequency: 1.93GHz ~ 1.99GHz
• Gain: 24dB
• P1db: 15W
• Package / Case: 16-PFP
• Rf Type: Cellular, W-CDMA, IS-95, N-CDMA
• Voltage - Supply: 28V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Test Frequency: -

MHV5IC2215NR2
2
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
W - CDMA Functional Tests (In Freescale Test Fixture, 50 ohm system) V
f = 2140 MHz, Single - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Typical N - CDMA Tests (In Freescale Test Fixture, 50 ohm system) V
f = 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
@ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Power Gain
Gain Flatness in 60 MHz Bandwidth @ P
Adjacent Channel Power Ratio
Input Return Loss
Power Gain
Gain Flatness @ P
Adjacent Channel Power Ratio
Input Return Loss
Average Deviation from Linear Phase in 60 MHz Bandwidth
Average Group Delay @ P
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Driver Application
(P
@ P
Select Documentation/Application Notes - AN1955.
out
out
= 23 dBm CW)
= 23 dBm
out
= 23 dBm
Characteristic
Test Methodology
out
= 23 dBm Including Output Matching
Test Methodology
Characteristic
Rating
(T
out
C
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
f = 2110 - 2170 MHz
f = 1930 - 1990 MHz
= 25°C unless otherwise noted)
= 23 dBm
DQ1
DQ2
= 164 mA
= 115 mA
DD
Symbol
= 28 Vdc, I
ACPR
ACPR
Delay
DD
G
G
IRL
IRL
G
G
Φ
ps
ps
F
F
= 28 Vdc, I
Rating
3
DQ1
= 164 mA, I
DQ1
25.5
Symbol
Symbol
Min
23
—
—
—
—
—
—
—
—
V
R
V
T
P
DSS
T
θJC
GS
stg
= 164 mA, I
in
J
Package Peak Temperature
DQ2
27.5
Typ
DQ2
- 56
- 12
= 115 mA, P
- 60
- 12
0.3
0.3
0.2
1.5
24
260
III (Minimum)
A (Minimum)
0 (Minimum)
- 65 to +150
= 115 mA, P
- 0.5, +65
- 0.5, +12
Value
Class
Value
150
9.3
3.5
12
Freescale Semiconductor
(1)
out
Max
0.5
- 54
- 10
27
29
= 23 dBm,
—
—
—
—
—
out
RF Device Data
= 23 dBm,
°C/W
Unit
dBm
Unit
Vdc
Vdc
Unit
Unit
dBc
dBc
°C
°C
dB
dB
dB
dB
dB
dB
°C
ns
°