MHVIC2114NR2 Freescale Semiconductor, MHVIC2114NR2 Datasheet - Page 2

• Manufacturer Part Number: MHVIC2114NR2
• Description: IC RF POWER AMP 2100MHZ 16-PFP
• Manufacturer: Freescale Semiconductor

Specifications of MHVIC2114NR2

• Current - Supply: 95mA
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 32dB
• P1db: 15W
• Package / Case: 16-PFP
• Rf Type: Cellular, CDMA2000, W-CDMA, PCS
• Voltage - Supply: 27V
• Manufacturer's Type: Power Amplifier
• Number Of Channels: 1
• Frequency (max): 2.6GHz
• Operating Supply Voltage (min): 26V
• Operating Supply Voltage (typ): 27V
• Operating Supply Voltage (max): 28V
• Package Type: PFP
• Mounting: Surface Mount
• Pin Count: 16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

2
MHVIC2114NR2
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
W - CDMA Characteristics (In Freescale Test Fixture, 50 ohm system) V
P
Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
out
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Power Gain
Gain Flatness
Input Return Loss
Adjacent Channel Power Ratio
Group Delay
Phase Linearity
Driver Application
(P
= 23 dBm, 2110- 2170 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel
out
= +0.2 W CW)
Characteristic
Test Methodology
Test Methodology
Characteristic
Rating
(T
C
Stage 1, 27 Vdc, I
Stage 2, 27 Vdc, I
Stage 3, 27 Vdc, I
= 25°C unless otherwise noted)
DQ1
DQ2
DQ3
= 96 mA
= 204 mA
= 111 mA
Symbol
DD
ACPR
Delay
G
IRL
G
—
ps
= 27 Vdc, I
F
Rating
3
DQ1
Min
29
—
—
—
—
—
Symbol
Symbol
= 96 mA, I
V
R
V
T
P
DSS
T
Package Peak Temperature
stg
θJC
GS
in
J
DQ2
Typ
0.3
- 13
- 60
1.7
0.2
32
= 204 mA, I
260
A (Minimum)
0 (Minimum)
II (Minimum)
- 65 to +150
- 0.5, +65
- 0.5, +15
Class
Value
Value
7.52
5.52
11.5
150
Freescale Semiconductor
5
DQ3
Max
0.5
- 10
- 57
36
—
—
= 111 mA,
RF Device Data
°C/W
Unit
dBm
Unit
Unit
Unit
Vdc
Vdc
dBc
dB
dB
dB
°C
°C
°C
ns
°