MW6IC2015GNBR1 Freescale Semiconductor, MW6IC2015GNBR1 Datasheet - Page 7

• Manufacturer Part Number: MW6IC2015GNBR1
• Description: IC PWR AMP RF 26V 15W TO272-16GW
• Manufacturer: Freescale Semiconductor

Specifications of MW6IC2015GNBR1

• Current - Supply: 100mA
• Frequency: 1.8GHz ~ 1.99GHz
• Gain: 26dB
• Package / Case: TO-272-16 Gull Wing
• Rf Type: Cellular, W-CDMA, GSM, EDGE, TDMA, CDMA
• Voltage - Supply: 26V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• P1db: -
• Test Frequency: -

RF Device Data
Freescale Semiconductor
−80
−30
−40
−50
−60
−70
32
30
28
26
24
22
0.1
0.1
Figure 9. Intermodulation Distortion Products
V
I
I
f = 1960 MHz
5th Order
DQ1
DQ2
3rd Order
7th Order
DD
Figure 12. Power Gain and Power Added
= 26 Vdc
= 100 mA
= 170 mA
Efficiency versus CW Output Power
85_C
P
versus Tone Spacing
out
V
I
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
DQ1
TWO−TONE SPACING (MHz)
DD
, OUTPUT POWER (WATTS) CW
= 26 Vdc, P
= 100 mA, I
1
1
25_C
T
C
= −30_C
out
DQ2
35
30
25
20
15
10
TYPICAL CHARACTERISTICS — 1930 - 1990 MHz
= 75 W (PEP)
5
0
= 170 mA
0.1
Figure 11. 2 - Carrier W - CDMA ACPR, IM3, Power
2−Carrier W−CDMA
10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
V
I
f1 = 1955 MHz, f2 = 1965 MHz
IM3
DQ1
DD
10
−30_C
= 26 Vdc
= 100 mA, I
PAE
Gain and Power Added Efficiency
PAE
10
P
out
25_C
, OUTPUT POWER (WATTS) AVG.
DQ2
versus Output Power
85_C
= 170 mA
G
ps
ACPR
30
100
1
50
40
30
20
10
0
48
46
44
42
40
38
30
28
26
24
22
20
18
10
0
Figure 13. Power Gain versus Output Power
P3dB = 44.8 dBm (30 W)
P1dB = 44 dBm (25 W)
Figure 10. Pulsed CW Output Power versus
10
G
ps
5
26 V
P
15
out
MW6IC2015NBR1 MW6IC2015GNBR1
, OUTPUT POWER (WATTS) CW
30
P
−25
−30
−35
−40
−45
−50
−55
−60
10
in
, INPUT POWER (dBm)
Input Power
V
I
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
DQ1
DD
Ideal
20
15
= 26 Vdc
= 100 mA, I
V
DD
= 20 V
20
DQ2
I
I
f = 1840 MHz
= 170 mA
25
DQ1
DQ2
Actual
= 100 mA
= 170 mA
25
28 V
30 V
30
30
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