MW7IC18100NBR1 Freescale Semiconductor, MW7IC18100NBR1 Datasheet - Page 18

no-image

MW7IC18100NBR1

Manufacturer Part Number
MW7IC18100NBR1
Description
IC PWR AMP RF LDMOS TO272-14
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MW7IC18100NBR1

Current - Supply
1.18A
Frequency
1.805GHz ~ 2.05GHz
Gain
30dB
P1db
51.93dBm
Package / Case
TO-272-14
Rf Type
GSM, EDGE
Test Frequency
1.9GHz
Voltage - Supply
24 ~ 32V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MW7IC18100NBR1
Manufacturer:
FREESCALE
Quantity:
100
18
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
32
31
30
29
28
27
−55
−60
−65
−70
−75
−80
−85
−50
−60
−70
−80
−90
1760
0
1
Figure 39. Power Gain versus Output Power
Figure 41. Spectral Regrowth at 400 kHz and
SR @ 400 kHz
SR @ 600 kHz
V
I
f = 1840 MHz, EDGE Modulation
DQ1
1780 1800 1820 1840
DD1
Figure 43. Spectral Regrowth at 600 kHz
= 215 mA, I
= 28 Vdc
50
P
600 kHz versus Frequency
P
out
out
30 W Avg.
, OUTPUT POWER (WATTS) CW
, OUTPUT POWER (WATTS) AVG.
versus Output Power
DQ2
f, FREQUENCY (MHz)
= 800 mA
40 W Avg.
30 W Avg.
V
40 W Avg.
10
DD
P
100
out
= 24 V
V
I
f = 1840 MHz, EDGE Modulation
DQ1
= 50 W Avg.
DD1
1860 1880 1900
= 215 mA, I
= 28 Vdc, V
TYPICAL CHARACTERISTICS — 1800 MHz
28 V
T
150
I
I
f = 1840 MHz
DQ1
DQ2
C
DQ2
DD2
= 85_C
32 V
= 180 mA
= 1000 mA
= 815 mA
50 W Avg.
= 28 Vdc
100
1920
−30_C
25_C
1940
200
200
14
12
10
8
6
4
2
0
1
−40
−50
−60
−70
−80
4
3
2
1
0
1760
Figure 44. EVM and Power Added Efficiency
V
I
I
f = 1840 MHz
EDGE Modulation
1
DQ1
DQ2
DD1
V
I
f = 1840 MHz, EDGE Modulation
= 215 mA
= 800 mA
DQ1
= 28 Vdc
DD1
1780 1800
Figure 42. Spectral Regrowth at 400 kHz
= 215 mA, I
= 28 Vdc
30 W Avg.
Figure 40. EVM versus Frequency
P
out
, OUTPUT POWER (WATTS) AVG.
versus Output Power
40 W Avg.
P
out
P
DQ2
, OUTPUT POWER (WATTS) AVG.
versus Output Power
1820 1840
out
f, FREQUENCY (MHz)
= 50 W Avg.
= 800 mA
10
PAE
EVM
10
T
C
V
I
EDGE Modulation
1860 1880 1900
= −30_C
DQ1
DD
Freescale Semiconductor
25_C
= 28 Vdc
= 215 mA, I
T
C
= −30_C
85_C
RF Device Data
DQ2
100
−30_C
= 800 mA
25_C
85_C
1920
100
85_C
25_C
200
70
60
50
40
30
10
0
20
1940
200

Related parts for MW7IC18100NBR1