MD7IC21100NBR1 Freescale Semiconductor, MD7IC21100NBR1 Datasheet
MD7IC21100NBR1
Specifications of MD7IC21100NBR1
Related parts for MD7IC21100NBR1
MD7IC21100NBR1 Summary of contents
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... Watts out ) out RF /V out1 DS2A (1) ( out2 DS2B MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 Document Number: MD7IC21100N Rev. 0, 10/2008 MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 2110 - 2170 MHz Avg SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1618 - 270 PLASTIC MD7IC21100NR1 CASE 1621 - 270 GULL ...
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... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 4. Each side of device measured separately. MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 2 Stage 1, 28 Vdc 190 mA DQ1A ...
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... GS G PAE PAR ACPR IRL = 28 Vdc P1dB IMD VBW = 32 W Avg. G out ΔI (4) Φ Delay = 110 W CW, ΔΦ out ΔG ΔP1dB MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 Min Typ Max — — 10 — — 1 — — — 2.8 — 5.3 5.9 6.8 0.1 ...
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... C12, C13, C14 1.2 pF Chip Capacitors C15 0.5 pF Chip Capacitor C16, C17 0.1 μF, 100 V Chip Capacitors C18, C19 1 μF, 100 V Chip Capacitors R1, R2, R3, R4 4.7 KΩ, 1/4 W Chip Resistors R5 Ω,1/2 W Chip Resistors MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 4 DUT Quiescent Current Temperature Compensation ...
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... MD7IC21100N Rev GG1 GG2 R5 Figure 4. MD7IC21100NR1(GNR1)(NBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor DD1 C9 C12 C15 C13 C8 C2 C10 Single−ended Quadrature combined Doherty Push−pull Possible Circuit Topologies Figure 5. MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 C3 C18 C16 C4 C11 C14 C5 C17 C19 C6 5 ...
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... P , OUTPUT POWER (WATTS) CW out Figure 7. Power Gain versus Output Power @ 190 mA DQ1A DQ1B −10 −20 −30 −40 −50 −60 MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 6 TYPICAL CHARACTERISTICS Vdc (Avg.), out DQ1A DQ1B 925 mA, Single−Carrier W−CDMA DQ2A DQ2B D 3.84 MHz Channel Bandwidth Input Signal PAR = 7 0.01% Probability on CCDF ...
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... Efficiency and ACPR versus Output Power Gain IRL Vdc dBm out DQ1A DQ1B DQ2A DQ2B 1750 1850 1950 2050 2150 2250 2350 2450 f, FREQUENCY (MHz) Figure 12. Broadband Frequency Response MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 − −25 ACPR −30 35 − −40 25 −45 20 PARC − ...
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... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 8 TYPICAL CHARACTERISTICS 1st Stage 2nd Stage 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Matching Test Network Z Z source load MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 f = 2220 MHz = 32 W Avg. out Output Matching Network 9 ...
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... NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Z source Ω P1dB 48.64 - j0.94 Figure 17. Pulsed CW Output Power versus Input Power @ 2110 MHz MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 10 56 Ideal P3dB = 52.59 dBm (182 P1dB = 51.94 dBm (156 W) 53 ...
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... MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 = I = 925 mA 25°C, 50 Ohm System) DQ2B ∠ φ ∠ φ 22 110.1 0.986 170.7 - 161.5 0.962 166.0 148.5 ...
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... MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 12 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 13 ...
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... MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 14 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 15 ...
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... MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 16 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 17 ...
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... MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 18 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 19 ...
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... MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 20 RF Device Data Freescale Semiconductor ...
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... AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Oct. 2008 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 21 ...
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... P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 303- 675- 2140 Fax 303- 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 Document Number: MD7IC21100N Rev. 0, 10/2008 22 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...