RMPA0965 Fairchild Semiconductor, RMPA0965 Datasheet - Page 2

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RMPA0965

Manufacturer Part Number
RMPA0965
Description
IC MOD RF POWER AMP 8PIN 3X3LCC
Manufacturer
Fairchild Semiconductor
Type
Power Amplifierr
Datasheet

Specifications of RMPA0965

Current - Supply
60mA
Frequency
824MHz ~ 849MHz
Gain
30dB
Noise Figure
4dB
Package / Case
8-LCC
Rf Type
Cellular, CDMA, CDMA2000, AMPS, IS-95, HSDPA
Voltage - Supply
3V ~ 4.2V
Number Of Channels
1
Frequency (max)
849MHz
Output Power
28dBm
Power Supply Requirement
Single
Single Supply Voltage (min)
3V
Single Supply Voltage (typ)
3.4V
Single Supply Voltage (max)
4.2V
Package Type
PLCC
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Operating Temperature Classification
Commercial
Operating Temp Range
-30C to 85C
Pin Count
9
Mounting
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
P1db
-
Test Frequency
-
Lead Free Status / Rohs Status
Compliant
Other names
RMPA0965TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RMPA0965
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
RMPA0965 Rev. F
Absolute Ratings
Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics
Notes:
1. All parameters met at Tc = +25°C, Vcc = +3.4V, Freq = 836.5MHz, Vref = 2.85V and load VSWR
2. All phase angles.
3. Guaranteed by design.
Vcc1, Vcc2
Vref
Vmode
Pin
T
f
CDMA Operation
SSg
Gp
Po
PAEd
Itot
ACPR1
ACPR2
AMPS Operation
Gp
PAEa
General Characteristics
VSWR
NF
Rx No
S
Tc
DC Characteristics
Iccq
Iref
Symbol
2fo-5fo
Icc(off)
STG
otherwise noted.
Symbol
Operating Frequency
Small-Signal Gain
Power Gain
Linear Output Power
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
PAEd (digital) @ +16dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
±885KHz Offset
±1.98MHz Offset
Gain
Power-Added Efficiency (analog)
Input Impedance
Noise Figure
Receive Band Noise Power
Harmonic Suppression
Spurious Outputs
Ruggedness w/ Load Mismatch
Case Operating Temperature
Quiescent Current
Reference Current
Shutdown Leakage Current
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
Parameter
1
2, 3
3
1
3
Parameter
Min
824
-30
28
16
2.0:1
-137
Typ
470
130
-50
-52
-60
-70
29
30
29
40
25
30
52
60
2
9
4
5
1
2.5:1
Max
10:1
849
-30
-60
85
8
5
dBm/Hz Po ≤ +28dBm; 869 to 894MHz
Units
MHz
dBm
dBm
dBc
dBc
dBc
dBc
dBc
dBc
mA
mA
mA
mA
dB
dB
dB
dB
dB
°C
µA
%
%
%
%
-55 to +150
Po = 0dBm
Vmode = 0V
Vmode ≥ 2.0V
Vmode ≥ 2.0V, Vcc = 1.4V
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode ≥ 2.0V
IS-95 A/B Modulation
Po = +31dBm
Vmode ≥ 2.0V
Po ≤ +28dBm
2.6 to 3.5
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode ≥ 2.0V
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode ≥ 2.0V
Po = +31dBm
Po ≤ +28dBm
Load VSWR ≤ 5.0:1
No permanent damage.
No applied RF signal.
Value
+10
5.0
3.5
Comments
www.fairchildsemi.com
Units
1.2:1, unless
dBm
°C
V
V
V

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