AMMC-5024-W10 Avago Technologies US Inc., AMMC-5024-W10 Datasheet - Page 2

• Manufacturer Part Number: AMMC-5024-W10
• Description: IC MMIC AMP TWA GAAS 30-40GHZ
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of AMMC-5024-W10

• Function: Amplifier
• Noise Figure Typ: 5.5dB
• Supply Current: 350mA
• Supply Voltage Range: 7V
• Frequency Max: 40GHz
• Frequency Min: 30kHz
• Supply Voltage Max: 10V
• Gain: 16dB
• Number Of Channels: 1
• Frequency (max): 40GHz
• Output Power: 22.5@22000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (max): 10V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1845; AMMC-5024-W10

AMMC-5024 DC Specifications/Physical Properties
Symbol
I
V
V
I
(V
I
(V
θ
RF Specifications for High Power Applications
Symbol
|S
∆|S
RL
RL
|S
P
P
OIP3
NF
RF Specifications for High Gain and Low Power Applications
Symbol
|S
∆|S
RL
RL
|S
P
P
OIP3
NF
Notes:
1. Backside temperature T
2. Channel to board Thermal Resistance is measured using QFI method.
3. 100% on-wafer RF test is done at frequency = 2, 10, 20, 30 and 40 GHz, except as noted.
2
dss
dsmin
dsmin
ch-b
-1dB
sat
-1dB
sat
p
g2
21
12
21
12
g1
g2
in
out
in
out
21
21
|
|
|
|
)
)
2
2
2
2
|
|
2
2
Parameters and Test Conditions
Saturated Drain Current (V
First Gate Pinch-off Voltage (V
Second Gate Self-bias Voltage (V
First Gate Minimum Drain Current
(V
Second Gate Minimum Drain Current
(V
Thermal Resistance
Parameters and Test Conditions
Small-signal Gain
Small-signal Gain Flatness
Input Return Loss
Output Return Loss
Isolation
Output Power @ 1 dB Gain Compression
Saturated Output Power
Output 3
Rf
Noise Figure (V
Parameters and Test Conditions
Small-signal Gain
Small-signal Gain Flatness
Minimum Input Return Loss
Minimum Output Return Loss
Isolation
Output Power @ 1 dB Gain Compression
Saturated Output Power
Output 3
Rf
Noise Figure
dd
dd
in1
in1
=7 V, V
=7 V, V
= Rf
= Rf
in2
in2
rd
rd
b
g1
g1
Order Intercept Point,
Order Intercept Point,
= 25°C unless otherwise noted.
= 2 dBm, f = 22 GHz, ∆f = 2 MHz
= 2 dBm, f = 22 GHz, ∆f = 2 MHz
=-7 V, V
=0 V, V
ds
= 3V, I
g2
[2]
g2
= -3.5 V)
(Backside temperature, T
=open circuit)
ds
= 140 mA)
dd
=7 V, V
dd
=7 V, I
dd
[2, 3]
=7 V, I
g1
=0 V, V
[1]
dd
(V
=30 mA, V
dd
dd
=7 V, I
= 200 mA, V
g2
=open circuit)
b
= 25°C)
dd
[2, 3]
(Q)=200 mA, Z
g2
f = 22 GHz
f = 22 GHz
f = 26 GHz
f = 40 GHz
f = 22 GHz
f = 22 GHz
f = 26 GHz
f = 40 GHz
=open circuit)
(V
dd
g2
=4 V, I
=open circuit)
dd
in
(Q)=160 mA, Z
= Z
o
=50Ω
Units
mA
V
V
mA
mA
°C/W
Units
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
dB
Units
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
dB
in
= Z
o
=50Ω)
Min.
14
12
10
26
21
23
27
Min.
265
Min.
Typ.
350
-8.2
2.75
47
105
16.2
Typ.
16
±0.75
16.9
16.8
28
22.5
24.5
30
4.6
7.2
Typ.
17.5
±1.5
13
13
30
17.3
20.5
22.5
3.7
5.5
Max.
385
Max.
18
±2
6.5
9
Max.