ATA5577M2330C-DBN Atmel, ATA5577M2330C-DBN Datasheet - Page 7
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ATA5577M2330C-DBN
Manufacturer Part Number
ATA5577M2330C-DBN
Description
IC RFID R/W BUMP WAFER
Manufacturer
Atmel
Datasheet
1.ATA5577M1250C-DDB.pdf
(8 pages)
Specifications of ATA5577M2330C-DBN
Function
Read/Write
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
6. Electrical Characteristics (Continued)
T
7. Revision History
4967DS–RFID–10/08
*) Type means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data
Notes:
amb
10.1
10.2
10.3
11.1
11.2
11.3
11.4
11.5
12.1
12.2
No.
= +25°C; f
1. I
2. Current into Coil1/Coil2 is limited to 10 mA.
3. Since EEPROM performance is influenced by assembly processes, Atmel confirms the parameters for DOW (tested die on
Parameters
Data retention
Resonance capacitor
Micromodule capacitor
parameters
defeat. I
uncut wafer) delivery.
DD
coil
measurement set-up R = 100k ; V
= 125 kHz; unless otherwise specified
DD
= (V
OUTmax
Please note that the following page numbers referred to in this section refer to the specific revision
mentioned, not to this document.
Revision No.
4967DS-RFID-10/08
4967CS-RFID-01/08
4967BS-RFID-09/07
– V
Test Conditions
Top = 55°C
Top = 150°C
Top = 250°C
Mask option
V
Capacitance tolerance
T
Temperature coefficient
amb
coil pp
CLK
) / R
= 1V
(3)
(3)
(3)
CLK
= V
coil
History
= 3V: EEPROM programmed to 00 ... 000 (erase all); chip in modulation
Section 6 “Electrical Characteristics” numbers 2.1, 2.2 and 2.3 on page 6
changed
Features on page 1 changed
Features on page 1 changed
Section 2 “Compatibility” on page 2 changed
Section 4.9 “Mode Register” on page 4 changed
Put datasheet in a new template
Section 4.2 “Data-rate Generator” on page 3 changed
Figure 4-2 “Memory Map” on page 5 changed
Symbol
t
t
t
retention
retention
retention
TBD
C
C
r
r
Min.
TBD
TBD
TBD
TBD
320
242
320
10
96
24
Typ.
TBD
330
250
130
330
20
75
10
Max.
TBD
TBD
TBD
TBD
340
258
340
50
Years
Unit
TBD
hrs
hrs
pF
pF
ATA5577
Type*
TBD
Q
Q
Q
T
T
T
7