OM7619/BGA2003 NXP Semiconductors, OM7619/BGA2003 Datasheet - Page 2

EVAL BOARD FOR BGA2003

OM7619/BGA2003

Manufacturer Part Number
OM7619/BGA2003
Description
EVAL BOARD FOR BGA2003
Manufacturer
NXP Semiconductors
Type
Amplifier, MMICr
Datasheet

Specifications of OM7619/BGA2003

Mfg Application Notes
BGA2003 Application Notes
Frequency
1.8GHz
For Use With/related Products
BGA2003
Lead Free Status / RoHS Status
Not applicable / Not applicable
Other names
568-4082
NXP Semiconductors
FEATURES
• Low current
• Very high power gain
• Low noise figure
• Integrated temperature compensated biasing
• Control pin for adjustment bias current
• Supply and RF output pin combined.
APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
• Low noise amplifiers
• Satellite television tuners (SATV)
• High frequency oscillators.
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin SOT343R package.
QUICK REFERENCE DATA
2010 Sep 13
V
I
MSG
NF
S
SYMBOL
telephones, cordless telephones (PHS, DECT, etc.)
S
Silicon MMIC amplifier
DC supply voltage
DC supply current
maximum stable gain
noise figure
PARAMETER
RF input AC coupled
V
RF input AC coupled
V
T
V
amb
VS-OUT
VS-OUT
VS-OUT
= 25 °C
= 2.5 V; I
= 2.5 V; f = 1800 MHz;
= 2.5 V; f = 1800 MHz; Γ
CONDITIONS
2
CTRL
PINNING
handbook, halfpage
= 1 mA;
Marking code: A3*
Fig.1 Simplified outline (SOT343R) and symbol.
PIN
1
2
3
4
2
3
Top view
S
GND
RF in
CTRL (bias current control)
V
= Γ
S
+ RF out
opt
4
1
11
16
1.8
MAM427
TYP.
DESCRIPTION
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
CIRCUIT
CTRL
BIAS
Product specification
RFin
4.5
MAX.
BGA2003
V
S +RFout
GND
V
mA
dB
dB
UNIT

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