SI4312-B10-GM Silicon Laboratories Inc, SI4312-B10-GM Datasheet - Page 4

• Manufacturer Part Number: SI4312-B10-GM
• Description: IC RX OOK 315/434MHZ 20VQFN
• Manufacturer: Silicon Laboratories Inc
• Series: EZRadio®r
• Type: ISM Receiverr

Specifications of SI4312-B10-GM

• Package / Case: 20-VQFN
• Frequency: 315MHz, 434MHz
• Sensitivity: -110dBm
• Data Rate - Maximum: 10 kBaud
• Modulation Or Protocol: OOK
• Applications: Garage Openers, RKE, Security Alarms
• Data Interface: PCB, Surface Mount
• Antenna Connector: PCB, Surface Mount
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Operating Frequency: 315 MHz to 434 MHz
• Operating Supply Voltage: 2.7 V to 3.6 V
• Maximum Operating Temperature: + 95 C
• Minimum Operating Temperature: - 45 C
• Mounting Style: SMD/SMT
• Supply Current: 20 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Features: -
• Memory Size: -
• Current - Receiving: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1977-5

Si4312
1. Electrical Specifications
Table 1. Recommended Operating Conditions*
Table 2. Absolute Maximum Ratings
4
Parameter
*Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Parameter
Supply Voltage
Input Current
Input Voltage
Operating Temperature
Storage Temperature
RF Input Level
Notes:
Supply Voltage
Supply Voltage Powerup Rise Time
Ambient Temperature
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
2. The Si4312 device is a high-performance RF integrated circuit with certain pins having an ESD rating of < 2 kV HBM.
3. For input pins 315/434, RATIO, BT[1:0], TH[1:0].
4. At RF input pin RX_IN.
Typical values apply at V
otherwise stated.
restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended
operating conditions for extended periods may affect device reliability.
Handling and assembly of this device should only be done at ESD-protected workstations.
3
3
4
DD
= 3.3 V and 25 C unless otherwise stated. Parameters are tested in production unless
1,2
V
Symbol
DD-RISE
V
T
DD
A
Symbol
T
V
T
V
I
STG
OP
DD
IN
IN
Rev. 0.5
Test Condition
–0.3 to (V
–0.5 to 3.9
–55 to 150
–45 to 95
Value
0.4
10
DD
Min
+ 0.3)
2.7
–40
10
Typ
3.3
—
25
Max
3.6
Unit
85
V
—
mA
C
C
V
V
PK
Unit
μs
°C
V