MC13211 Freescale Semiconductor, MC13211 Datasheet - Page 62

• Manufacturer Part Number: MC13211
• Description: IC TXRX RF 2.4GHZ FLSH 16K 71LGA
• Manufacturer: Freescale Semiconductor
• Series: MC1321xr

Specifications of MC13211

• Frequency: 2.4GHz
• Data Rate - Maximum: 250kbps
• Modulation Or Protocol: 802.15.4 Zigbee
• Applications: General Purpose
• Power - Output: 3dBm
• Sensitivity: -92dBm
• Voltage - Supply: 1.8 V ~ 3.6 V
• Current - Receiving: 42mA
• Current - Transmitting: 35mA
• Data Interface: PCB, Surface Mount
• Memory Size: 16kB Flash, 1kB RAM
• Antenna Connector: PCB, Surface Mount
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 71-LGA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6.4.4
This section provides details about program/erase times and program-erase endurance for the FLASH
memory. Program and erase operations do not require any special power sources other than the normal
V
62
1
2
3
4
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
DD
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for
Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data
retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Non-volatile Memory.
0 < f
0 < f
T
T = 25°C
L
supply.
to T
Bus
Bus
H
< 8 MHz
< 20 MHz
= –40°C to + 85°C
FLASH Specifications
4
2
(2)
Characteristic
1
3
(2)
(2)
MC13211/212/213 Technical Data, Rev. 1.8
Table 21. FLASH Characteristics
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
D_ret
Burst
Page
Mass
Fcyc
prog
Read
10,000
2.08
Min
150
2.1
1.8
15
5
100,000
Typical
20,000
4000
100
9
4
Freescale Semiconductor
Max
6.67
200
3.6
3.6
3.6
—
—
—
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V