SI1014-A-GM Silicon Laboratories Inc, SI1014-A-GM Datasheet - Page 64
SI1014-A-GM
Manufacturer Part Number
SI1014-A-GM
Description
IC TXRX MCU + EZRADIOPRO
Manufacturer
Silicon Laboratories Inc
Specifications of SI1014-A-GM
Package / Case
42-QFN
Frequency
240MHz ~ 960MHz
Data Rate - Maximum
256kbps
Modulation Or Protocol
FSK, GFSK, OOK
Applications
General Purpose
Power - Output
13dBm
Sensitivity
-121dBm
Voltage - Supply
0.9 V ~ 3.6 V
Current - Receiving
18.5mA
Current - Transmitting
30mA
Data Interface
PCB, Surface Mount
Memory Size
16kB Flash, 768B RAM
Antenna Connector
PCB, Surface Mount
Number Of Receivers
1
Number Of Transmitters
1
Wireless Frequency
240 MHz to 960 MHz
Interface Type
UART, SMBus, SPI, PCA
Output Power
13 dBm
Operating Supply Voltage
0.9 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Maximum Supply Current
4 mA
Minimum Operating Temperature
- 40 C
Modulation
FSK, GFSK, OOK
Protocol Supported
C2, SMBus
Core
8051
Program Memory Type
Flash
Program Memory Size
16 KB
Data Ram Size
768 B
Supply Current (max)
4 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Operating Temperature
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1869-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1014-A-GM
Manufacturer:
Silicon Laboratories Inc
Quantity:
135
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Si1010/1/2/3/4/5
Table 4.12. Voltage Reference Electrical Characteristics
V
64
Internal High Speed Reference (REFSL[1:0] = 11)
Output Voltage
VREF Turn-on Time
Supply Current
Internal Precision Reference (REFSL[1:0] = 00, REFOE = 1)
Output Voltage
VREF Short-Circuit Current
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
VREF Turn-on Time 3
Supply Current
External Reference (REFSL[1:0] = 00, REFOE = 0)
Input Voltage Range
Input Current
DD
= 1.8 to 3.6 V,
Parameter
–
40 to +85 °C unless otherwise specified.
no bypass cap, settling to 0.5 LSB
0.1 µF ceramic bypass, settling to
Sample Rate = 300 ksps; VREF =
4.7 µF tantalum, 0.1 µF ceramic
Load = 0 to 200 µA to AGND
bypass, settling to 0.5 LSB
Normal Power Mode
Low Power Mode
V
V
–40 to +85 °C,
–40 to +85 °C,
DD
DD
Conditions
0.5 LSB
= 1.8–3.6 V
= 1.8–3.6 V
3.0 V
Rev. 1.0
1.645
1.60
Min
—
—
—
—
—
—
—
—
—
—
0
1.680
1.65
5.25
Typ
260
140
400
300
10
15
25
15
—
—
1.715
Max
1.70
V
1.5
—
—
—
—
—
—
—
—
—
DD
µV/µA
Units
mA
ms
µA
µA
µA
µs
µs
µs
V
V
V
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