MC13193FCR2 Freescale Semiconductor, MC13193FCR2 Datasheet - Page 8
![IC RF TRANSCEIVER 2.4GHZ 32-QFN](/photos/6/81/68115/375-32-qfn_sml.jpg)
MC13193FCR2
Manufacturer Part Number
MC13193FCR2
Description
IC RF TRANSCEIVER 2.4GHZ 32-QFN
Manufacturer
Freescale Semiconductor
Datasheet
1.13192DSK-A0E.pdf
(24 pages)
Specifications of MC13193FCR2
Frequency
2.4GHz
Data Rate - Maximum
250kbps
Modulation Or Protocol
802.15.4
Applications
AMR, HID, HVAC, ISM
Power - Output
-3dBm ~ 4dBm
Sensitivity
-92dBm
Voltage - Supply
2 V ~ 3.4 V
Current - Receiving
37mA
Current - Transmitting
30mA
Data Interface
PCB, Surface Mount
Antenna Connector
PCB, Surface Mount
Operating Temperature
-40°C ~ 85°C
Package / Case
32-QFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Memory Size
-
Other names
MC13193FCR2TR
Electrical Characteristics
5.2
5.3
8
1
2
Power Supply Current (V
Input Current (V
Input Low Voltage (All digital inputs)
Input High Voltage (all digital inputs)
Output High Voltage (I
Output Low Voltage (I
To attain specified low power current, all GPIO and other digital IO must be handled properly. See
Considerations.
CLKO frequency at default value of 32.786 kHz.
1
Power Supply Voltage (V
Input Frequency
Ambient Temperature Range
Logic Input Voltage Low
Logic Input Voltage High
SPI Clock Rate
RF Input Power
Crystal Reference Oscillator Frequency (±40 ppm over
operating conditions to meet the 802.15.4 Standard.)
Off
Doze (No CLKO)
Idle
Transmit Mode (0 dBm nominal output power)
Receive Mode
Hibernate
If the supply voltage is produced by a switching DC-DC converter, ripple should be less than 100 mV peak-to-peak.
1
Recommended Operating Conditions
DC Electrical Characteristics
1
IN
= 0 V or V
1 2
OL
OH
Characteristic
Characteristic
= 1 mA) (All digital outputs)
BATT
= -1 mA) (All digital outputs)
BATT
DDINT
+ V
(V
= V
BATT
DDINT
) (All digital inputs)
Table 2. Recommended Operating Conditions
DDINT
, V
)
Table 3. DC Electrical Characteristics
DDINT
)
1
MC13192 Technical Data, Rev. 3.3
= 2.7 V, T
A
= 25 °C, unless otherwise noted)
Symbol
V
V
Symbol
P
I
DDINT
f
BATT,
V
leakage
V
f
T
SPI
I
I
I
f
max
I
V
ref
I
V
V
in
CCH
CCD
CCT
CCR
V
IH
CCI
I
A
IL
IN
OH
OL
IH
IL
V
2.405
70%
Min
DDINT
-40
2.0
V
V
0
-
-
70%
80%
Min
DDINT
DDINT
0
0
-
-
-
-
-
-
-
Typ
2.7
25
16 MHz Only
-
-
-
-
-
Typ
500
0.2
1.0
35
30
37
-
-
-
-
-
Section 8.4, “Low Power
Freescale Semiconductor
V
V
2.480
Max
30%
DDINT
DDINT
3.4
8.0
85
10
V
V
V
V
Max
30%
20%
DDINT
DDINT
DDINT
DDINT
102
800
1.0
6.0
35
42
±1
MHz
dBm
Unit
GHz
Vdc
°C
V
V
Unit
mA
mA
µA
µA
µA
µA
µA
V
V
V
V