APTDC40H601G Microsemi Power Products Group, APTDC40H601G Datasheet - Page 2

POWER MODULE DIODE 600V 40A SP1

APTDC40H601G

Manufacturer Part Number
APTDC40H601G
Description
POWER MODULE DIODE 600V 40A SP1
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTDC40H601G

Voltage - Peak Reverse (max)
600V
Current - Dc Forward (if)
40A
Diode Type
Single Phase, Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Mounting Type
PCB
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTDC40H601GMI
APTDC40H601GMI
Electrical Characteristics
Symbol Characteristic
Thermal and package characteristics
Symbol Characteristic
Torque
SP1 Package outline
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
V
R
T
I
Wt
V
Q
T
T
ISOL
RM
C
STG
thJC
C
F
C
J
Diode Forward Voltage
Maximum Reverse Leakage Current
Total Capacitive Charge
Total Capacitance
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
All ratings @ T
j
= 25°C unless otherwise specified
www.microsemi.com
Test Conditions
I
V
I
di/dt =1200A/µs
f = 1MHz, V
f = 1MHz, V
F
F
R
= 40A
= 40A, V
To heatsink
= 600V
R
R
R
= 300V
= 200V
= 400V
T
T
T
T
j
j
j
j
= 25°C
= 175°C
= 25°C
= 175°C
M4
APTDC40H601G
2500
Min
Min
-40
-40
-40
2.5
Typ
Typ
200
400
260
200
1.6
56
2
4000
Max
Max
175
125
100
800
0.8
4.7
1.8
2.4
80
°C/W
Unit
Unit
N.m
µA
nC
pF
°C
V
V
g
2 - 3

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