APTDC40H601G Microsemi Power Products Group, APTDC40H601G Datasheet - Page 3

POWER MODULE DIODE 600V 40A SP1

APTDC40H601G

Manufacturer Part Number
APTDC40H601G
Description
POWER MODULE DIODE 600V 40A SP1
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTDC40H601G

Voltage - Peak Reverse (max)
600V
Current - Dc Forward (if)
40A
Diode Type
Single Phase, Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Mounting Type
PCB
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTDC40H601GMI
APTDC40H601GMI
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Typical Performance Curve
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1600
1400
1200
1000
0.00001
80
60
40
20
800
600
400
200
0
0
0
0
1
0.05
0.7
0.5
0.9
0.3
0.1
Capacitance vs.Reverse Voltage
0.5
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Forward Characteristics
T
J
V
=75°C
T
F
J
1
V
=25°C
Forward Voltage (V)
R
10
0.0001
Reverse Voltage
1.5
2
T
J
100
=125°C
2.5
T
J
=175°C
0.001
Rectangular Pulse Duration (Seconds)
3
1000
3.5
www.microsemi.com
Single Pulse
0.01
800
700
600
500
400
300
200
100
0
200
APTDC40H601G
0.1
300
Reverse Characteristics
V
R
Reverse Voltage (V)
400
T
T
J
=125°C
J
=175°C
500
1
600
T
J
=25°C
T
700
J
=75°C
800
10
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