STTH10002TV2 STMicroelectronics, STTH10002TV2 Datasheet - Page 3

• Manufacturer Part Number: STTH10002TV2
• Description: DIODE ULT FAST 200V 50A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STTH10002TV2

• Voltage - Forward (vf) (max) @ If: 1V @ 50A
• Current - Reverse Leakage @ Vr: 50µA @ 200V
• Current - Average Rectified (io) (per Diode): 50A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 65ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Anti Parallel
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.15 V at 100 A
• Recovery Time: 65 ns
• Forward Continuous Current: 50 A
• Max Surge Current: 750 A
• Reverse Current Ir: 50 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5273-5

STTH10002
Table 4.
Figure 1.
Figure 3.
Symbol
V
I
RM
t
t
FP
rr
fr
600
500
400
300
200
100
300
250
200
150
100
50
0
0
0.0
0.0
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
0.1
0.2
Dynamic characteristics
δ
Peak current versus duty cycle
Forward voltage drop versus
forward current (maximum values,
per diode)
0.2
0.4
P = 100 W
P = 100 W
0.3
Parameter
0.6
0.4
T
P = 60 W
P = 60 W
j
=150°C
0.5
0.8
0.6
1.0
P = 30 W
P = 30 W
T
0.7
j
=25°C
1.2
I
I
M
M
δ
d
=tp/T
=tp/T
0.8
V
1.4
T
T
FM
0.9
(V)
I
V
I
V
I
V
I
V
I
T
F
F
F
F
F
j
tp
tp
R
R
R
FR
= 1 A, dI
= 1 A, dI
= 50 A, dI
= 50 A, dI
= 50 A, dI
= 25 °C
= 30 V, T
= 30 V, T
= 160 V, T
1.0
1.6
= 1.1 x V
Test conditions
F
F
Figure 2.
Figure 4.
/dt = -50 A/µs,
/dt = -200 A/µs,
F
F
F
j
j
/dt = 200 A/µs,
/dt = 200 A/µs
/dt = 200 A/µs,
= 25 °C
= 25 °C
Fmax
j
= 125 °C
300
250
200
150
100
1.0
0.1
50
1.E-03
, T
0
0.0
j
Single pulse
= 25 °C
ISOTOP
0.2
Forward voltage drop versus
forward current (typical values, per
diode)
impedance, junction to case,
versus pulse duration
Relative variation of thermal
1.E-02
0.4
0.6
T
j
=150°C
1.E-01
Min.
0.8
1.0
T
j
=25°C
Typ
180
1.6
53
30
10
1.E+00
Characteristics
1.2
Max.
tp(s)
65
37
13
1.4
V
FM
(V)
1.E+01
1.6
Unit
ns
ns
A
V
3/8