STTH10002TV2 STMicroelectronics, STTH10002TV2 Datasheet - Page 4

• Manufacturer Part Number: STTH10002TV2
• Description: DIODE ULT FAST 200V 50A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STTH10002TV2

• Voltage - Forward (vf) (max) @ If: 1V @ 50A
• Current - Reverse Leakage @ Vr: 50µA @ 200V
• Current - Average Rectified (io) (per Diode): 50A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 65ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Anti Parallel
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.15 V at 100 A
• Recovery Time: 65 ns
• Forward Continuous Current: 50 A
• Max Surge Current: 750 A
• Reverse Current Ir: 50 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5273-5

Characteristics
4/8
Figure 5.
Figure 7.
Figure 9.
1000
120
110
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
90
80
70
60
50
40
30
20
10
0
10
25
1
V
I
F
R
= 50 A
=160V
Junction capacitance versus
reverse applied voltage (typical
values)
Reverse recovery time versus dI
(typical values)
Dynamic parameters versus
junction temperature
50
I
RM
10
Q
RR
75
100
T
T
j
=125 °C
j
=25 °C
100
100
V
125
osc
dI
V
F=1MHz
T
T
I
R
F
=30mV
F
j
j
= 50 A
= 160 V
/dt(A/µs)
=25°C
(°C)
V
R
(V)
RMS
1000
1000
150
F
/dt
Figure 6.
Figure 8.
450
400
350
300
250
200
150
100
20
16
12
50
8
4
0
0
10
10
V
I
F
R
= 50 A
V
=160V
I
F
R
= 50 A
=160 V
Reverse recovery charges versus
dI
Peak reverse recovery current
versus dI
F
/dt (typical values)
F
/dt (typical values)
100
100
T
T
T
j
=125 °C
j
=125 °C
j
=25 °C
T
j
=25 °C
dI /dt(A/µs)
dI
STTH10002
F
/dt(A/µs)
1000
1000