HFA120FA60 Vishay, HFA120FA60 Datasheet

DIODE HEXFRED 600V 75A SOT-227

HFA120FA60

Manufacturer Part Number
HFA120FA60
Description
DIODE HEXFRED 600V 75A SOT-227
Manufacturer
Vishay
Series
HEXFRED®r
Datasheet

Specifications of HFA120FA60

Voltage - Forward (vf) (max) @ If
1.7V @ 60A
Current - Reverse Leakage @ Vr
20µA @ 600V
Current - Average Rectified (io) (per Diode)
75A (DC)
Voltage - Dc Reverse (vr) (max)
600V
Reverse Recovery Time (trr)
98ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
2 Independent
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*HFA120FA60
VS-HFA120FA60
VS-HFA120FA60
VSHFA120FA60
VSHFA120FA60

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HFA120FA60
Manufacturer:
IR
Quantity:
27
Part Number:
HFA120FA60
Manufacturer:
IR
Quantity:
300
Part Number:
HFA120FA60
Manufacturer:
ST
0
Part Number:
HFA120FA60P
Manufacturer:
MIT
Quantity:
6 219
Document Number: 94049
Revision: 22-Jul-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS PER LEG
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
RMS isolation voltage, any terminal to case
Maximum power dissipation
Operating junction and storage temperature range
ELECTRICAL SPECIFICATIONS PER LEG (T
PARAMETER
Cathode to anode breakdown voltage
Maximum forward voltage
Maximum reverse leakage current
Junction capacitance
dI
(rec)M
V
F
(typical) at 125 °C
/dt (typical) at 125 °C
I
RRM
Q
I
t
F(DC)
rr
rr
(typical)
(typical)
(typical)
V
R
at T
C
SOT-227
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
Ultrafast Soft Recovery Diode, 60 A
SYMBOL
40 A at 100 °C
V
V
270 A/μs
I
C
RM
270 nC
BR
FM
600 V
65 ns
1.4 V
7.0 A
T
I
I
I
I
V
T
V
SYMBOL
R
F
F
F
R
J
R
T
= 60 A
= 120 A
= 60 A, T
= 100 μA
V
J
= 125 °C, V
I
I
HEXFRED
= V
= 200 V
FRM
FSM
, T
V
ISOL
P
I
F
R
D
Stg
R
J
rated
= 25 °C unless otherwise specified)
J
TEST CONDITIONS
= 125 °C
R
T
T
T
Rated V
t = 1 minute
T
T
C
C
J
C
C
= 0.8 x V
= 25 °C
= 25 °C
= 100 °C
= 25 °C
= 100 °C
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
DESCRIPTION
This SOT-227 modules with HEXFRED
available in two basic configurations. They are the
antiparallel and the parallel configurations. The antiparallel
configuration (HFA120EA60) is used for simple series
rectifier and high voltage application. The parallel
configuration (HFA120FA60) is used for simple parallel
rectifier and high current application. The semiconductor in
the SOT-227 package is isolated from the copper base
plate, allowing for common heatsinks and compact
assemblies to be built. These modules are intended for
general applications such as power supplies, battery
chargers, electronic welders, motor control, DC chopper,
and inverters.
R
, square wave, 20 kHz, T
®
TEST CONDITIONS
R
rated
DiodesEurope@vishay.com
See fig. 1
See fig. 2
See fig. 3
Vishay Semiconductors
C
MIN.
600
= 60 °C
-
-
-
-
-
-
HFA120FA60P
TYP.
130
120
- 55 to 150
1.5
1.9
1.4
2.5
VALUES
-
2500
600
800
180
180
75
40
71
MAX.
®
2000
170
www.vishay.com
1.7
2.1
1.6
20
-
rectifier are
UNITS
UNITS
°C
W
A
V
V
μA
pF
V
1

Related parts for HFA120FA60

HFA120FA60 Summary of contents

Page 1

... V configuration (HFA120EA60) is used for simple series 1.4 V rectifier and high voltage application. The parallel 270 nC configuration (HFA120FA60) is used for simple parallel 7.0 A rectifier and high current application. The semiconductor in the SOT-227 package is isolated from the copper base 65 ns plate, allowing for common heatsinks and compact 270 A/μ ...

Page 2

... HFA120FA60P Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T PARAMETER Reverse recovery time See fig and 16 Peak recovery current See fig. 7 and 8 Reverse recovery charge See fig. 9 and 10 Peak rate of recovery current during t b See fig. 11 and 12 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting ...

Page 3

... J 100 100 V - Reverse Voltage ( 0.01 0.001 0. Rectangular Pulse Duration (s) 1 Characteristics (Per Leg) thJC HFA120FA60P Vishay Semiconductors T = 150 ° 125 ° ° 200 400 V - Reverse Voltage (V) R Fig Typical Reverse Current vs. Reverse Voltage (Per Leg) 1000 P DM ...

Page 4

... HFA120FA60P Vishay Semiconductors 200 V = 200 125 ° °C J 160 120 80 40 100 dI /dt (A/μs) 94049_05 F Fig Typical Reverse Recovery Time vs. dI 100 V = 200 125 ° ° 120 100 dI /dt (A/µs) 94049_06 F Fig Typical Recovery Current vs. dI www.vishay.com For technical questions within your region, please contact one of the following: 4 DiodesAmericas@vishay ...

Page 5

... I RRM RRM Fig Reverse Recovery Waveform and Definitions High-speed switch Freewheel + Diode Fig Avalanche Test Circuit and Waveforms HFA120FA60P Vishay Semiconductors ( 0.5 I RRM (5) dI /dt (rec)M RRM RRM ...

Page 6

... HFA120FA60P Vishay Semiconductors CIRCUIT CONFIGURATION ORDERING INFORMATION TABLE Device code Dimensions Packaging information www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, ® HEXFRED Ultrafast Soft Recovery Diode 120 ® HEXFRED family 2 - Process: A electron irradiated 3 - Current rating (120 = 120 A) ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords