HFA120FA60 Vishay, HFA120FA60 Datasheet - Page 5

• Manufacturer Part Number: HFA120FA60
• Description: DIODE HEXFRED 600V 75A SOT-227
• Manufacturer: Vishay
• Series: HEXFRED®r

Specifications of HFA120FA60

• Voltage - Forward (vf) (max) @ If: 1.7V @ 60A
• Current - Reverse Leakage @ Vr: 20µA @ 600V
• Current - Average Rectified (io) (per Diode): 75A (DC)
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 98ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *HFA120FA60; VS-HFA120FA60; VS-HFA120FA60; VSHFA120FA60; VSHFA120FA60

Document Number: 94049
Revision: 22-Jul-10
Current
monitor
D.U.T.
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
(1) dI
(2) I
(3) t
0
L = 100 µH
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
RRM
through zero crossing
rr
R
I
F
F
- reverse recovery time measured
g
/dt - rate of change of current
= 25 Ω
- peak reverse recovery current
F
to point where a line passing
Ultrafast Soft Recovery Diode, 60 A
Fig. 10 - Reverse Recovery Waveform and Definitions
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 11 - Avalanche Test Circuit and Waveforms
RRM
and 0.50 I
(1)
Freewheel
adjust
dI
Diode
F
/dt
dI
High-speed
F
/dt
RRM
switch
HEXFRED
L = 70 μH
G
V
d
t
= 50 V
a
(2)
V
(3)
+
R
= 200 V
I
RRM
t
0.01 Ω
D
rr
S
(4) Q
(5) dI
IRFP250
®
and I
current during t
rr
(rec)M
0.75 I
- area under curve defined by t
RRM
t
D.U.T.
/dt - peak rate of change of
b
RRM
[e-mail]
dI
0.5 I
Q
(rec)M
rr
Q
=
RRM
b
rr
/dt
portion of t
t
(4)
rr
V
x I
(5)
2
R(RATED)
I
V
RRM
L(PK)
(AVAL)
Vishay Semiconductors
rr
rr
Decay
time
HFA120FA60P
www.vishay.com
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