BYV541V-200 STMicroelectronics, BYV541V-200 Datasheet
BYV541V-200
Specifications of BYV541V-200
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BYV541V-200 Summary of contents
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... Surge non repetitive forward current FSM Tstg Storage and junction temperature range Tj Symbol Parameter V Repetitive peak reverse voltage RRM ISOTOP is a trademark of STMicroelectronics. May 2000 - BYV541V-200 Parameter Per diode = 0.5 Tc=90°C Per diode tp=10ms Per diode sinusoidal BYV54V / BYV541V BYV54V BYV541V BYV54V-200 ...
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... BYV54V / BYV541V THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Rth (c) Coupling When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol 100° 125° 125°C ...
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... Single pulse 0.1 100 500 1.0E-03 Fig.6 : temperature. (duty cycle : 0.5) I F(av)( Tc= Tc= Tc= =tp BYV54V / BYV541V P=30W =tp/T P=15W P=45W P=60W =tp/T tp(s) 1.0E-02 1.0E-01 Average current versus Rth(j-a)=Rth(j-c) T Tamb 100 120 1.0E+00 ambient 140 160 ...
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... BYV54V / BYV541V Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). C(pF F=1Mhz Tj= VR( Fig.9 : Peak reverse current versus dIF/dt. IRM(A) 4.0 90%CONFIDENCE 3.6 IF=IF(av) 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 dIF/dt(A/us) 0 4/5 Fig.8 : Recovery charges versus dI QRR(nC 90%CONFIDENCE ...
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... Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. REF STMicroelectronics GROUP OF COMPANIES http://www.st.com BYV54V / BYV541V DIMENSIONS Millimeters Inches Min. Max. Min. Max. 11.80 12.20 0.465 0.480 8.90 9.10 0.350 0.358 7.8 8.20 0.307 0.323 0.75 0.85 0.030 ...