BYV541V-200 STMicroelectronics, BYV541V-200 Datasheet - Page 4

• Manufacturer Part Number: BYV541V-200
• Description: DIODE FAST REC 200V 50A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of BYV541V-200

• Voltage - Forward (vf) (max) @ If: 850mV @ 50A
• Current - Reverse Leakage @ Vr: 50µA @ 200V
• Current - Average Rectified (io) (per Diode): 50A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 60ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2689-5

Fig.7 : Junction capacitance versus reverse
voltage applied (Typical values).
42 0
40 0
38 0
36 0
34 0
32 0
30 0
28 0
26 0
24 0
Fig.9 : Peak reverse current versus dIF/dt.
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
BYV54V / BYV541V
4/5
1
1
IRM(A)
C(pF)
90%CONFIDENCE
IF=IF(av)
2 0
1 0
VR(V)
1 0
dIF/dt(A/us)
F=1Mhz Tj=25 C
Tj=100 C
Tj=25 C
1 00
O
o
O
1 00
20 0
Fig.8 : Recovery charges versus dI
1 20
11 0
1 00
Fig.10 : Dynamic parameters versus junction
temperature.
1.50
1.25
1.00
0.75
0.50
0.25
0.00
90
80
70
60
50
40
30
20
1 0
0
1
0
QRR(nC)
QRR;IRM[Tj]/QRR;IRM[Tj=125 C]
90%CONFIDENCE
IF=IF(av)
25
50
Tj( C)
IRM
o
1 0
dIF/dt(A/us)
75
Tj=100 C
QRR
100
o
O
F
Tj=25 C
/dt.
125
O
1 00
150