APT35GP120J Microsemi Power Products Group, APT35GP120J Datasheet - Page 3

IGBT 1200V 64A 284W SOT227

APT35GP120J

Manufacturer Part Number
APT35GP120J
Description
IGBT 1200V 64A 284W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT35GP120J

Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 35A
Current - Collector (ic) (max)
64A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.24nF @ 25V
Power - Max
284W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT35GP120JMI
APT35GP120JMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT35GP120J
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT35GP120J
Manufacturer:
APT
Quantity:
15 500
Part Number:
APT35GP120JDQ2
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT35GP120JDX
Manufacturer:
SEMIKRON
Quantity:
530
Part Number:
APT35GP120JFD2
Manufacturer:
APT
Quantity:
15 500
TYPICAL PERFORMANCE CURVES
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
1.05
0.95
0.90
0.85
120
100
1.2
1.1
1.0
0.8
80
70
60
50
40
30
20
10
80
60
40
20
0
0
6
5
4
3
2
1
0
FIGURE 1, Output Characteristics(V
-50
V
0
0
6
CE
250µs PULSE TEST
<0.5 % DUTY CYCLE
<0.5 % DUTY CYCLE
250µs PULSE TEST
V
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
1
FIGURE 3, Transfer Characteristics
GE
-25
T
V GE = 15V.
J
, GATE-TO-EMITTER VOLTAGE (V)
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
T
C
1
2
8
=125°C
0
3
I
C=
T J = 125°C
T
25
70A
10
C
2
4
=25°C
I
T J = 25°C
C=
50
5
35A
12
3
6
75
250µs PULSE TEST
<0.5 % DUTY CYCLE
7
I
100 125 150
C=
T J = 25°C.
T J = -55°C
17.5A
14
4
8
GE
9
= 15V)
16
10
5
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
4.5
3.5
2.5
1.5
0.5
80
70
60
50
40
30
20
10
16
14
12
10
90
80
70
60
50
40
30
20
10
0
8
6
4
2
0
5
4
3
2
1
0
0
FIGURE 2, Output Characteristics (V
-50
V
0
0
0
CE
250µs PULSE TEST
T
250µs PULSE TEST
<0.5 % DUTY CYCLE
<0.5 % DUTY CYCLE
I
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 35A
20
-25
V GE = 10V.
V GE = 15V.
T
T
C
25
T
C
=125°C
1
J
, CASE TEMPERATURE (°C)
40
FIGURE 4, Gate Charge
, Junction Temperature (°C)
0
GATE CHARGE (nC)
I
C=
V
60
25
T
CE
35A
50
C
2
=25°C
= 600V
V
CE
80
50
= 240V
75
3
100 120 140 160
75
I
V
C=
100 125 150
CE
100
17.5A
4
= 960V
I
C=
GE
70A
= 10V)
APT35GP120J
125
5

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