APT35GP120J Microsemi Power Products Group, APT35GP120J Datasheet - Page 4

• Manufacturer Part Number: APT35GP120J
• Description: IGBT 1200V 64A 284W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT35GP120J

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 35A
• Current - Collector (ic) (max): 64A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.24nF @ 25V
• Power - Max: 284W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT35GP120JMI; APT35GP120JMI

FIGURE 15, Switching Energy Losses vs. Gate Resistance
5000
4000
3000
2000
1000
FIGURE 13, Turn-On Energy Loss vs Collector Current
8000
7000
6000
5000
4000
3000
2000
1000
FIGURE 9, Turn-On Delay Time vs Collector Current
140
120
100
FIGURE 11, Current Rise Time vs Collector Current
35
30
25
20
15
10
80
60
40
20
5
0
0
0
0
I
I
10
CE
10
CE
10
I
0
CE
R
V
R
V
T J = 25°C, T
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
V
V
T
CE
G
G
T
, COLLECTOR TO EMITTER CURRENT (A)
J
CE
CE
GE
G
J
= 5
= 125
=
=
= 5
= 600V
= 600V
= 600V
= +15V
E
E
E
125°C,V
R
5 , L
20
20
20
off
V
on2
on2
G
°
10
GE
T
C
, GATE RESISTANCE (OHMS)
70A
J
35A
17.5A
= 10V
=
=
J
GE
100
25 or125°C,V
T
=125°C
30
30
30
J
=
=
µ
10V
25°C,V
H, V
20
T
T
J
CE
40
J
40
= 25 or
40
=
GE
125°C,V
=
GE
=
600V
30
10V
=
T
V
J
50
50
10V
125°C,V
50
GE
=
GE
25°C,V
= 15V
=
E
15V
on2
E
40
GE
off
60
E
60
60
GE
70A
off
17.5A
=
=
10V
35A
15V
70
50
70
70
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
4000
3000
2000
1000
5000
4000
3000
2000
1000
FIGURE 10, Turn-Off Delay Time vs Collector Current
180
160
140
120
100
100
FIGURE 12, Current Fall Time vs Collector Current
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
0
0
I
I
CE
CE
10
10
10
I
0
CE
R
E
V
R
V
R
L = 100 µH
V
V
R
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
E
G
CE
off
G
CE
GE
, COLLECTOR TO EMITTER CURRENT (A)
G
CE
G
off
= 5
=
T
= 5
= 5
35A
T
V
= 600V
= 600V
= +15V
70A
J
= 600V
T
GE
5 , L
J
20
J
20
=
20
, JUNCTION TEMPERATURE (°C)
=
25
125°C, V
=
V
10V,T
125°C, V
GE
T
=
J
100
=
=15V,T
30
30
30
T
J
25°C, V
=125°C
J
µ
GE
H, V
50
=
GE
=
25°C, V
J
=
E
=25°C
CE
10V or 15V
40
40
GE
40
off
10V or 15V
=
V
17.5A
=
600V
GE
GE
75
E
10V or 15V
V
on2
=
=
GE
50
50
50
10V,T
10V or 15V
70A
=15V,T
E
J
100
=25°C
E
on2
60
60
60
on2
J
=125°C
17.5A
35A
APT35GP120J
125
70
70
70