APTGF100DA120T1G Microsemi Power Products Group, APTGF100DA120T1G Datasheet - Page 4

• Manufacturer Part Number: APTGF100DA120T1G
• Description: IGBT 1200V 130A 735W SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF100DA120T1G

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 100A
• Current - Collector (ic) (max): 130A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.5nF @ 25V
• Power - Max: 735W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
200
175
150
125
100
200
175
150
125
100
40
35
30
25
20
15
10
0.16
0.12
0.08
0.04
75
50
25
Switching Energy Losses vs Gate Resistance
75
50
25
5
0
0.2
0
0
0.00001
0
0
0
5
V
V
I
T
C
J
CE
GE
= 100A
Output Characteristics (V
= 125°C
0.3
0.05
0.7
0.5
0.1
0.9
= 600V
=15V
6
1
10
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
2
20
0.0001
8
V
T
V
T
CE
J
GE
=125°C
J
3
=25°C
(V)
(V)
T
9
30
J
=125°C
T
J
=25°C
Eoff
4
10
Eon
GE
=15V)
40
rectangular Pulse Duration (Seconds)
0.001
5
11
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Single Pulse
50
12
6
0.01
APTGF100DA120T1G
250
200
150
100
35
30
25
20
15
10
200
175
150
125
100
50
5
0
75
50
25
0
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
J
CE
GE
G
J
GE
G
J
= 125°C
25
=125°C
= 5.6 Ω
=5.6 Ω
0.1
= 125°C
= 600V
= 15V
=15V
300
1
50
Output Characteristics
75 100 125 150 175 200
2
600
I
C
V
V
(A)
CE
V
GE
CE
3
(V)
900
1
=20V
(V)
4
Eon
IGBT
1200
V
V
GE
V
GE
5
GE
Eoff
=15V
=9V
=12V
1500
10
6
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