APTGF100DA120T1G Microsemi Power Products Group, APTGF100DA120T1G Datasheet - Page 5

• Manufacturer Part Number: APTGF100DA120T1G
• Description: IGBT 1200V 130A 735W SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF100DA120T1G

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 100A
• Current - Collector (ic) (max): 130A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.5nF @ 25V
• Power - Max: 735W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
100
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
90
80
70
60
50
40
30
20
10
0
0
Operating Frequency vs Collector Current
0
0.05
0.9
switching
0.7
0.5
0.1
0.3
hard
20
ZCS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZVS
40
0.0001
60
I
C
(A)
80
100 120 140
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=5.6 Ω
=600V
0.001
rectangular Pulse Duration (Seconds)
Single Pulse
www.microsemi.com
Diode
0.01
APTGF100DA120T1G
200
175
150
125
100
75
50
25
0
0
0.1
Forward Characteristic of diode
0.5
1
V
1.5
F
T
(V)
J
1
=125°C
2
T
J
=25°C
2.5
10
3
5 – 5