APTGF50DDA120T3G Microsemi Power Products Group, APTGF50DDA120T3G Datasheet - Page 5
APTGF50DDA120T3G
Manufacturer Part Number
APTGF50DDA120T3G
Description
IGBT MOD NPT 1200V 50A SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF50DDA120T3G.pdf
(7 pages)
Specifications of APTGF50DDA120T3G
Igbt Type
NPT
Configuration
Dual Boost Chopper
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
70A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.45nF @ 25V
Power - Max
312W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APTGF50DDA120T3G
Manufacturer:
Microsemi Power Products Group
Quantity:
135
180
140
100
18
16
14
12
10
45
40
35
30
25
60
20
28
24
20
16
12
8
6
4
2
0
8
4
0
Switching Energy Losses vs Gate Resistance
0
0
0
0
Turn-On Delay Time vs Collector Current
Turn-On Energy Loss vs Collector Current
V
R
V
Current Rise Time vs Collector Current
V
R
V
T
CE
G
CE
Eon, 50A
GE
J
CE
G
I
= 5Ω
I
= 125°C
V
CE
= 600V
CE
I
= 5Ω
CE
= 600V
CE
R
= 600V
= 15V
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
10
25
G
, Collector to Emitter Current (A)
25
25
= 600V
= 5Ω
Gate Resistance (Ohms)
20
50
50
50
V
T
GE
V
J
=125°C,
GE
=15V
Eoff, 25A
=15V
75
75
30
75
T
V
V
J
GE
=25°C,
GE
=15V
= 15V
Eoff, 50A
100
100
100
Eon, 25A
40
www.microsemi.com
125
125
125
50
APTGF50DDA120T3G
400
350
300
250
200
50
40
30
20
8
6
4
2
0
8
6
4
2
0
25
0
0
0
Turn-Off Energy Loss vs Collector Current
Switching Energy Losses vs Junction Temp.
V
Turn-Off Delay Time vs Collector Current
V
Eoff, 50A
V
R
Current Fall Time vs Collector Current
CE
R
GE
CE
G
G
V
I
I
V
I
= 5Ω
CE
= 600V
CE
CE
CE
R
= 15V
= 5Ω
= 600V
GE
G
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
T
, Collector to Emitter Current (A)
= 600V
25
25
= 15V
25
= 5Ω
J
T
V
, Junction Temperature (°C)
50
J
CE
= 125°C
= 600V, V
50
50
50
T
J
= 25°C
GE
75
Eon, 50A
= 15V, R
75
75
75
T
V
J
T
T
GE
= 125°C
V
T
J
J
Eoff, 25A
=25°C
Eon, 25A
GE
J
= 25°C
=15V,
=125°C
G
=15V,
= 5Ω
100
100
100
100
125
125
125
125
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