APTGF50DDA120T3G Microsemi Power Products Group, APTGF50DDA120T3G Datasheet - Page 6

• Manufacturer Part Number: APTGF50DDA120T3G
• Description: IGBT MOD NPT 1200V 50A SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF50DDA120T3G

• Igbt Type: NPT
• Configuration: Dual Boost Chopper
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 50A
• Current - Collector (ic) (max): 70A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.45nF @ 25V
• Power - Max: 312W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
0.45
0.35
0.25
0.15
0.05
1000
0.4
0.3
0.2
0.1
100
0.00001
0
Capacitance vs Collector to Emitter Voltage
0
V
0.05
0.1
0.9
0.7
0.5
0.3
CE
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
0.001
40
Rectangular Pulse Duration (Seconds)
Coes
Cres
Cies
Single Pulse
www.microsemi.com
50
0.01
APTGF50DDA120T3G
120
100
80
60
40
20
120
100
80
60
40
20
0
0
Operating Frequency vs Collector Current
0
10
V
switching
CE
Reverse Bias Safe Operating Area
0.1
Hard
, Collector to Emitter Voltage (V)
20
I
C
400
, Collector Current (A)
ZCS
ZVS
30
800
1
40
V
D = 50%
R
T
T
G
J
C
CE
= 75°C
= 125°C
= 5Ω
= 600V
50
1200
10
60
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