APT60GF120JRDQ3 Microsemi Power Products Group, APT60GF120JRDQ3 Datasheet - Page 3

• Manufacturer Part Number: APT60GF120JRDQ3
• Description: IGBT 1200V 149A 625W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT60GF120JRDQ3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 100A
• Current - Collector (ic) (max): 149A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 7.08nF @ 25V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT60GF120JRDQ3MI; APT60GF120JRDQ3MI

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
180
160
140
120
100
180
160
140
120
100
80
60
40
20
80
60
40
20
0
0
5
4
3
2
1
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
GE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
GE
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
T
= 15V
J
T
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
2
J
= 125°C
T
T
J
10
J
0
= 25°C
= 125°C
4
25
T
T
J
= 25°C
J
T
= -55°C
J
12
50
6
= -55°C
75
8
100 125 150
14
10
J
= 25°C)
16
12
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
350
300
250
200
150
100
250
200
150
100
50
16
14
12
10
50
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
5
4
3
2
1
0
0
-50
V
0
0
0
CE
I
T
<0.5 % DUTY CYCLE
C
250µs PULSE TEST
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 100A
= 25°C
100 200 300 400 500 600 700 800
-25
V
25
T
5
GE
T
C
J
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
15V
0
GATE CHARGE (nC)
10
50
V
V
CE
25
13V
CE
= 600V
= 240V
12V
15
75
50
75 100 125 150
11V
100
20
V
CE
125
25
J
= 960V
= 125°C)
9V
8V
150
30