APT60GF120JRDQ3 Microsemi Power Products Group, APT60GF120JRDQ3 Datasheet - Page 5

• Manufacturer Part Number: APT60GF120JRDQ3
• Description: IGBT 1200V 149A 625W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT60GF120JRDQ3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 100A
• Current - Collector (ic) (max): 149A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 7.08nF @ 25V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT60GF120JRDQ3MI; APT60GF120JRDQ3MI

TYPICAL PERFORMANCE CURVES
Dissipated Power
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
(Watts)
20,000
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5,000
1,000
0.24
0.20
0.16
0.12
0.08
0.04
500
100
V
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
D = 0.9
T
10
J
(°C)
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.0374
0.0410
20
10
-4
0.680
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
0.123
EXT
30
are the external thermal
19.17
40
0.0358
C
RECTANGULAR PULSE DURATION (SECONDS)
C
C
T
ies
oes
10
res
C
(°C)
-3
50
SINGLE PULSE
10
-2
Figure 20, Operating Frequency vs Collector Current
50
10
5
1
20
T
D = 50 %
V
R
J
CE
G
= 125
= 1.0Ω
350
300
250
200
150
100
30
= 800V
Figure 18,Minimim Switching Safe Operating Area
50
0
°
I
C
C
0
V
, COLLECTOR CURRENT (A)
40
10
CE
-1
200
, COLLECTOR TO EMITTER VOLTAGE
50
T
400
C
60
= 100
Note:
Peak T J = P DM x Z θJC + T C
600
°
C
70
Duty Factor D =
T
C
1.0
= 75
800
80
t 1
°
C
t 2
90
1000 1200 1400
APT60GF120JRDQ3
t 1
100
/
t 2
F
f
f
P
max1
max2
max
diss
10
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f