APT60GF120JRDQ3 Microsemi Power Products Group, APT60GF120JRDQ3 Datasheet - Page 4

• Manufacturer Part Number: APT60GF120JRDQ3
• Description: IGBT 1200V 149A 625W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT60GF120JRDQ3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 100A
• Current - Collector (ic) (max): 149A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 7.08nF @ 25V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT60GF120JRDQ3MI; APT60GF120JRDQ3MI

FIGURE 15, Switching Energy Losses vs. Gate Resistance
35000
30000
25000
20000
15000
10000
25000
20000
15000
10000
5000
FIGURE 13, Turn-On Energy Loss vs Collector Current
5000
FIGURE 9, Turn-On Delay Time vs Collector Current
200
180
160
140
120
100
FIGURE 11, Current Rise Time vs Collector Current
70
60
50
40
30
20
10
80
60
40
20
0
0
0
0
I
I
10
CE
10 20 30 40 50 60 70 80 90 100 110 120
CE
10 20 30 40 50 60 70 80 90 100 110120
I
0
CE
V
V
R
V
T
R
L = 100 µH
V
, COLLECTOR TO EMITTER CURRENT (A)
V
R
L = 100 µH
V
, COLLECTOR TO EMITTER CURRENT (A)
V
V
T
CE
GE
G
, COLLECTOR TO EMITTER CURRENT (A)
J
CE
GE
CE
J
GE
G
CE
GE
G
E
= 5
= 125°C
= 25°C, T
= 800V
= +15V
= 5
on2
= 5
= 800V
= +15V
= 15V
R
= 800V
= 800V
= 15V
20
G
60A
, GATE RESISTANCE (OHMS)
E
off
J
30A
30
10
=125°C
T
J
T
=
J
25°C
=
T
40
T
J
125°C
=
J
125°C
=
25°C
50
20
E
on2
E
30A
60
off
60A
30
70
FIGURE 16, Switching Energy Losses vs Junction Temperature
18000
16000
14000
12000
10000
35000
30000
25000
20000
15000
10000
FIGURE 14, Turn Off Energy Loss vs Collector Current
8000
6000
4000
2000
5000
FIGURE 10, Turn-Off Delay Time vs Collector Current
800
800
700
600
500
400
300
200
100
200
180
160
140
120
100
FIGURE 12, Current Fall Time vs Collector Current
80
60
40
20
0
0
0
0
I
I
-25
CE
CE
10
10 20 30 40 50 60 70 80 90 100 110 120
I
0
CE
V
V
R
E
V
R
L = 100 µH
V
V
V
R
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
V
R
L = 100 µH
V
E
CE
GE
G
CE
GE
, COLLECTOR TO EMITTER CURRENT (A)
G
off
CE
GE
G
CE
GE
off
G
= 5
= 5
T
= 800V
= 5
= +15V
= 800V
= +15V
= 5
120A
60A
J
= 800V
= 15V
= 800V
= 15V
20
20
, JUNCTION TEMPERATURE (°C)
0
T
J
=
125°C
40
30
25
T
J
=25°C
T
J
T
J
=
=
60
40
25°C
50
125°C
50
80
75
T
J
=125°C
E
on2
T
100
E
E
100
J
60
APT60GF120JRD
E
on2
on2
=
120A
off
25°C
60A
30A
30A
125
120
70