APT60GF120JRDQ3 Microsemi Power Products Group, APT60GF120JRDQ3 Datasheet - Page 5

• Manufacturer Part Number: APT60GF120JRDQ3
• Description: IGBT 1200V 149A 625W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT60GF120JRDQ3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 100A
• Current - Collector (ic) (max): 149A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 7.08nF @ 25V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT60GF120JRDQ3MI; APT60GF120JRDQ3MI

TYPICAL PERFORMANCE CURVES
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5,000
1,000
0.005
0.001
0.25
0.05
0.01
500
100
0.1
V
CE
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
D=0.5
10
0.05
0.02
0.01
0.2
0.1
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
10
SINGLE PULSE
-4
30
40
RECTANGULAR PULSE DURATION (SECONDS)
36
10
C ies
C oes
10
5
1
C res
10
-3
Figure 20, Operating Frequency vs Collector
T
T
D = 50 %
V
R
50
J
C
CE
G
= 125
= 75
= 5
20
= 800V
°
I
°
C
C
C
30
, COLLECTOR CURRENT (A)
40
10
50
Current
-2
60
70
400
350
300
250
200
150
100
50
80 90 100
0
Figure 18, Reverse Bias Safe Operating Area
0 100 200 300 400 500 600 700 800 900 1000
V
CE
10
, COLLECTOR TO EMITTER VOLTAGE
-1
f
f
F
P
max1
max 2
max
diss
Note:
Peak T J = P DM x Z JC + T C
min(f
T
t
P
E
J
R
d (on )
diss
on 2
Duty Factor D =
JC
T
1.0
max1
C
P
E
t
t 1
cond
0.05
r
, f
off
max 2
t 2
t
d(off )
)
t 1
/ t
APT60GF120JRD
t
2
f
10