APTCV90TL12T3G Microsemi Power Products Group, APTCV90TL12T3G Datasheet - Page 2

• Manufacturer Part Number: APTCV90TL12T3G
• Description: POWER MODULE IGBT QUAD 900V SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTCV90TL12T3G

• Igbt Type: Trench and Field Stop
• Configuration: Three Level Inverter - IGBT, FET
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 2.77nF @ 25V
• Power - Max: 280W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTCV90TL12T3GMI; APTCV90TL12T3GMI

Q1 & Q4 Absolute maximum ratings
Q1 & Q4 Electrical Characteristics
Q1 & Q4 Dynamic Characteristics
Q2 & Q3 Absolute maximum ratings
Symbol Characteristic
Symbol Characteristic
RBSOA
Symbol
R
Symbol
V
T
T
R
R
V
I
I
C
V
C
Q
DS(on)
Q
V
E
V
E
GS(th)
Q
I
DSS
GSS
T
d(off)
T
I
I
d(on)
P
P
thJC
I
DSon
DM
I
CM
AR
oss
DSS
iss
CES
gs
gd
AR
AS
D
GS
r
f
C
GE
g
D
D
Input Capacitance
Output Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Junction to Case Thermal resistance
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Parameter
Parameter
Test Conditions
V
f = 1MHz
V
V
I
Inductive Switching (125°C)
V
V
I
R
Test Conditions
V
V
V
V
V
D
D
G
GS
GS
Bus
GS
Bus
GS
GS
GS
GS
GS
= 26A
= 26A
www.microsemi.com
= 7.5Ω
= 0V ; V
= 10V
= 10V
= 0V,V
= 0V,V
= 400V
= 400V
= 10V, I
= V
= ±20 V, V
DS
, I
DS
DS
D
DS
D
= 900V
= 900V
= 3mA
= 26A
= 100V
DS
= 0V
T
T
T
T
T
T
T
APTCV90TL12T3G
T
T
T
j
j
C
C
C
C
j
= 150°C
= 25°C
= 125°C
c
c
c
= 25°C
= 80°C
= 25°C
= 25°C
= 25°C
= 80°C
= 25°C
Min
Min
2.5
100A @ 1100V
Max ratings
Max ratings
6800
1940
Typ
330
270
115
400
1200
900
±20
120
250
70
20
25
100
±20
280
Typ
500
100
32
8.8
2.9
30
23
75
80
60
3
Max
Max
100
120
100
0.5
3.5
Unit
mΩ
Unit
°C/W
Unit
mJ
Unit
W
mΩ
V
A
V
A
µA
nC
nA
pF
ns
W
V
A
V
V
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