APTCV90TL12T3G Microsemi Power Products Group, APTCV90TL12T3G Datasheet - Page 9

• Manufacturer Part Number: APTCV90TL12T3G
• Description: POWER MODULE IGBT QUAD 900V SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTCV90TL12T3G

• Igbt Type: Trench and Field Stop
• Configuration: Three Level Inverter - IGBT, FET
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 2.77nF @ 25V
• Power - Max: 280W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTCV90TL12T3GMI; APTCV90TL12T3GMI

Microsemi reserves the right to change, without notice, the specifications and information contained herein
CR2, CR3, CR7 & CR8 Typical performance curve
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
1.4
1.2
0.8
0.6
0.4
0.2
2.5
1.5
0.5
80
60
40
20
0.00001
0
1
0
2
1
0
0.0
0
Forward Current vs Forward Voltage
Energy losses vs Collector Current
V
0.05
0.7
0.9
0.3
0.5
0.1
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
F
, Anode to Cathode Voltage (V)
1.0
20
0.0001
I
T
C
J
2.0
=125°C
(A)
40
T
J
V
V
R
T
=25°C
CE
GE
J
G
= 125°C
3.0
= 5Ω
60
= 800V
= 15V
0.001
Rectangular Pulse Duration (Seconds)
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4.0
80
Single Pulse
0.01
1.8
1.6
1.4
1.2
0.8
0.6
Switching Energy Losses vs Gate Resistance
1
APTCV90TL12T3G
0
V
V
I
T
C
J
CE
GE
0.1
= 30A
= 125°C
= 800V
=15V
Gate resistance (ohms)
10
1
20
10
30
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