APTGL475U120D4G Microsemi Power Products Group, APTGL475U120D4G Datasheet
APTGL475U120D4G
Specifications of APTGL475U120D4G
Related parts for APTGL475U120D4G
APTGL475U120D4G Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGL475U120D4G V I Application 1 • Welding converters • Switched Mode Power Supplies • ...
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... Maximum Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current RRM I DC Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy rr APTGL475U120D4G = 25°C unless otherwise specified j Test Conditions 1200V =15V T = 25° 400A T = 150°C C ...
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... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight (dimensions in mm) D4 Package outline APTGL475U120D4G IGBT Diode M6 M4 www.microsemi.com Min Typ Max Unit 0.072 °C/W 0.14 2500 V -40 175 ° ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 0.9 0.06 0.7 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 0.0001 APTGL475U120D4G =15V) GE 800 T 600 T =150°C J 400 200 (V) Energy losses vs Collector Current 160 V T =25°C 140 ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGL475U120D4G 800 V ...